是否Rohs认证: | 不符合 | 生命周期: | Obsolete |
包装说明: | TO-220, MP-45F, 3 PIN | Reach Compliance Code: | compliant |
风险等级: | 5.9 | Is Samacsys: | N |
雪崩能效等级(Eas): | 53 mJ | 外壳连接: | ISOLATED |
配置: | SINGLE WITH BUILT-IN DIODE | 最小漏源击穿电压: | 40 V |
最大漏极电流 (ID): | 45 A | 最大漏源导通电阻: | 0.018 Ω |
FET 技术: | METAL-OXIDE SEMICONDUCTOR | JEDEC-95代码: | TO-220AB |
JESD-30 代码: | R-PSFM-T3 | JESD-609代码: | e0 |
元件数量: | 1 | 端子数量: | 3 |
工作模式: | ENHANCEMENT MODE | 封装主体材料: | PLASTIC/EPOXY |
封装形状: | RECTANGULAR | 封装形式: | FLANGE MOUNT |
峰值回流温度(摄氏度): | NOT SPECIFIED | 极性/信道类型: | N-CHANNEL |
最大脉冲漏极电流 (IDM): | 140 A | 认证状态: | Not Qualified |
表面贴装: | NO | 端子面层: | TIN LEAD |
端子形式: | THROUGH-HOLE | 端子位置: | SINGLE |
处于峰值回流温度下的最长时间: | NOT SPECIFIED | 晶体管应用: | SWITCHING |
晶体管元件材料: | SILICON | Base Number Matches: | 1 |
型号 | 品牌 | 获取价格 | 描述 | 数据表 |
2SK3756 | TOSHIBA |
获取价格 |
Silicon N Channel MOS Type VHF- and UHF-band Amplifier Applications | |
2SK3756(TE12L,F) | TOSHIBA |
获取价格 |
TRANSISTOR,MOSFET,N-CHANNEL,7.5V V(BR)DSS,1A I(D),TO-243 | |
2SK3757 | TOSHIBA |
获取价格 |
Silicon N-Channel MOS Type Switching Regulator Applications | |
2SK3757_09 | TOSHIBA |
获取价格 |
Switching Regulator Applications | |
2SK3758 | TOSHIBA |
获取价格 |
Switching Regulator Applications | |
2SK3759 | TOSHIBA |
获取价格 |
TOSHIBA Field Effect Transistor Silicon N Cha | |
2SK375L | HITACHI |
获取价格 |
HIGH SPEED POWER SWITCHING | |
2SK375S | HITACHI |
获取价格 |
HIGH SPEED POWER SWITCHING | |
2SK376 | ETC |
获取价格 |
TRANSISTOR | JFET | N-CHANNEL | 60UA I(DSS) | SPAK | |
2SK3760 | TOSHIBA |
获取价格 |
Switching Regulator Applications |