Datasheet > 2SK3748-1E

2SK3748-1E

更新时间： 2023-09-03 20:38:30

品牌	Logo	应用领域
安森美 - ONSEMI		/
页数	文件大小	规格书
7页	236K
描述
N 沟道功率 MOSFET，1500V，4A，7Ω

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数据手册
替代型号

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2SK3748-1E 数据手册

Ordering number : EN8250B

2SK3748

N-Channel Power MOSFET

http://onsemi.com

1500V, 4A, 7 , TO-3PF-3L

Features

•

Low ON-resistance, low input capacitance, ultrahigh-speed switching

•

High reliability (Adoption of HVP process)

•

Attachment workability is good by Mica-less package

•

Avalanche resistance guarantee

Speciﬁcations

at Ta=25°C

Absolute Maximum Ratings

Parameter

Drain-to-Source Voltage

Gate-to-Source Voltage

Drain Current (DC)

Symbol

Conditions

Ratings

Unit

1500

DSS

±20

GSS

Drain Current (Pulse)

PW 10 s, duty cycle 1%

≤

3.0

Allowable Power Dissipation

Tc=25 C

Channel Temperature

Tch

150

Storage Temperature

Tstg

--55 to +150

Avalanche Energy (Single Pulse) *1

Avalanche Current *2

165

Shows chip capability

1 V =50V, L=20mH, I =4A (Fig.1)

2 L 20mH, single pulse

≤

Stresses exceeding Maximum Ratings may damage the device. Maximum Ratings are stress ratings only. Functional operation above the Recommended Operating

Conditions is not implied. Extended exposure to stresses above the Recommended Operating Conditions may affect device reliability.

Package Dimensions

unit : mm (typ)

Product & Package Information

• Package

: TO-3PF-3L

7538A-002

• JEITA, JEDEC

: SC-94

• Minimum Packing Quantity : 30 pcs./magazine

5.5

15.5

3.6

2SK3748-1E

3.0

Marking

Electrical Connection

K3748

2.0

LOT No.

2.0

4.0

0.9

0.75

1 : Gate

2 : Drain

3 : Source

5.45

TO-3PF-3L

Semiconductor Components Industries, LLC, 2013

July, 2013

53012 TKIM TC-00002764/72905 MSIM TB-00001688 / 31005QB TSIM TB-00001272 No.8250-1/7

12 3 4 5 6 7

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2SK3748-1E 替代型号

型号	品牌	替代类型	描述	数据表
2SK3747-1E	ONSEMI	类似代替	N 沟道，功率 MOSFET，1500V，2A，13Ω
2SK3748-1E	SANYO	功能相似	High-Voltage, High-Speed Switching Applications

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