2SK3749

更新时间： 2024-02-15 18:04:14

品牌	Logo	应用领域
日电电子 - NEC		晶体开关小信号场效应晶体管光电二极管
页数	文件大小	规格书
5页	104K
描述
N-CHANNEL MOSFET FOR HIGH-SPEED SWITCHING

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技术参数
数据手册

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2SK3749 技术参数

是否Rohs认证：	符合	生命周期：	Obsolete
Reach Compliance Code：	compliant	风险等级：	5.84
配置：	Single	最大漏极电流 (Abs) (ID)：	0.1 A
FET 技术：	METAL-OXIDE SEMICONDUCTOR	工作模式：	ENHANCEMENT MODE
最高工作温度：	150 °C	极性/信道类型：	N-CHANNEL
最大功率耗散 (Abs)：	0.15 W	子类别：	FET General Purpose Power
表面贴装：	YES

2SK3749 数据手册

DATA SHEET

MOS FIELD EFFECT TRANSISTOR

2SK3749

N-CHANNEL MOS FET FOR HIGH-SPEED SWITCHIG

PACKAGE DRAWING (Unit: mm)

DESCRIPTION

2.1 ꢀ.1

1.25 ꢀ.1

The 2SK3749 is an N-channel vertical MOS FET. Because

it can be driven by a voltage as low as 2.5 V and it is not

necessary to consider a drive current, this FET is ideal as an

actuator for low-current portable systems such as headphone

stereos and video cameras.

FEATURES

Marking

• Gate can be driven by 2.5 V

• Because of its high input impedance, there’s no need to

consider drive current

ORDERING INFORMATION

1 : Source

2 : Gate

3 : Drain

PART NUMBER

PACKAGE

2SK3749

SC-70 (SSP)

Marking: G27

EQUIVALENT CIRCUIT

ABSOLUTE MAXIMUM RATINGS (TA = 25°C)

Drain to Source Voltage (VGS = 0 V)

Gate to Source Voltage (V^DS= 0 V)

Drain Current (DC)

VDSS

VGSS

ID(DC)

ID(pulse)

P^T

±7.0

±100

±200

150

°C

Drain

Body

Diode

Drain Current (pulse) ^Note

Total Power Dissipation

Gate

Channel Temperature

T^ch

150

Gate

Storage Temperature

Note PW ≤ 10 ms, Duty Cycle ≤ 50%

Tstg

−55 to +150

°C

Protection

Diode

Source

Remark The diode connected between the gate and source of the transistor serves as a protector against ESD.

When this device actually used, an additional protection circuit is externally required if a voltage exceeding

the rated voltage may be applied to this device.

The information in this document is subject to change without notice. Before using this document, please

confirm that this is the latest version.

Not all products and/or types are available in every country. Please check with an NEC Electronics

sales representative for availability and additional information.

Document No. D17136EJ1V0DS00 (1st edition)

Date Published April 2004 NS CP(K)

Printed in Japan

2004

12 3 4 5

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