2SK3754

更新时间： 2024-02-08 04:06:52

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东芝 - TOSHIBA		晶体驱动器转换器继电器晶体管功率场效应晶体管开关脉冲电机 DC-DC转换器局域网
页数	文件大小	规格书
3页	146K
描述
Silicon N Channel MOS Type Relay Drive, DC−DC Converter and Motor Drive Applications

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技术参数
数据手册

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2SK3754 技术参数

是否Rohs认证：	符合	生命周期：	Active
Reach Compliance Code：	unknown	风险等级：	5.76
配置：	Single	最大漏极电流 (Abs) (ID)：	5 A
FET 技术：	METAL-OXIDE SEMICONDUCTOR	工作模式：	ENHANCEMENT MODE
最高工作温度：	150 °C	极性/信道类型：	N-CHANNEL
最大功率耗散 (Abs)：	25 W	子类别：	FET General Purpose Power
表面贴装：	NO	Base Number Matches：	1

2SK3754 数据手册

2SK3754

TOSHIBA Field Effect Transistor Silicon N Channel MOS Type (U-MOSIII)

2SK3754

Relay Drive, DC−DC Converter and

Unit: mm

Motor Drive Applications

•

4.5-V gate drive

Low drain-source ON resistance: R

= 71 mΩ (typ.)

DS (ON)

High forward transfer admittance: |Y | = 5.0 S (typ.)

Low leakage current: I

= 10 μA (max) (V

= 30 V)

DSS

Enhancement-model: V = 1.3~2.5 V (V

= 10 V, I = 1 mA)

Absolute Maximum Ratings (Ta = 25°C)

Characteristics

Drain-source voltage

Symbol

Rating

Unit

±20

DSS

Drain-gate voltage (R

Gate-source voltage

= 20 kΩ)

DGR

GSS

(Note 1)

Drain current

Pulse (Note 1)

JEDEC

JEITA

―

Drain power dissipation (Tc = 25°C)

SC-67

2-10R1B

Single pulse avalanche energy

4.0

TOSHIBA

(Note 2)

Weight: 1.9 g (typ.)

Avalanche current

2.5

Repetitive avalanche energy (Note 3)

Channel temperature

°C

150

Storage temperature range

stg

−55~150

Note: Using continuously under heavy loads (e.g. the application of high temperature/current/voltage and the significant change in

temperature, etc.) may cause this product to decrease in the reliability significantly even if the operating conditions (i.e.

operating temperature/current/voltage, etc.) are within the absolute maximum ratings. Please design the appropriate

reliability upon reviewing the Toshiba Semiconductor Reliability Handbook (“Handling Precautions”/Derating Concept and

Methods) and individual reliability data (i.e. reliability test report and estimated failure rate, etc).

Thermal Characteristics

Characteristics

Symbol

Max

Unit

Thermal resistance, channel to case

Thermal resistance, channel to ambient

5.0

°C/W

th (ch-c)

62.5

th (ch-a)

Note 1: Please use devices on conditions that the channel temperature is below 150°C.

Note 2: =24 V, T = 25°C (initial), L = 0.5 mH, R = 25 Ω, I = 2.5 A

Note 3: Repetitive rating: Pulse width limited by maximum channel temperature

This transistor is an electrostatic sensitive device. Please handle with caution.

2006-11-16

12 3

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