2SK3544
TOSHIBA Field-Effect Transistor Silicon N-Channel MOS Type (π-MOS V)
2SK3544
Unit: mm
Switching Regulator Applications
•
•
•
•
Low drain-source ON-resistance: R
= 0.29 Ω (typ.)
DS (ON)
High forward transfer admittance: |Y | = 5.8 S (typ.)
fs
Low leakage current: I
= 100 μA (max) (V
= 450 V)
DSS
DSS
Enhancement mode: V = 3.0 to 5.0 V (V
= 10 V, I = 1 mA)
D
th
DS
Absolute Maximum Ratings (Ta = 25°C)
Characteristics
Drain–source voltage
Symbol
Rating
Unit
V
450
450
±30
13
V
V
V
DSS
Drain–gate voltage (R
Gate–source voltage
= 20 kΩ)
V
GS
DGR
V
GSS
DC
(Note 1)
I
D
Drain current
A
Pulse (Note 1)
I
52
DP
Drain power dissipation (Tc = 25°C)
P
100
W
D
AS
AR
JEDEC
JEITA
―
―
Single-pulse avalanche energy
E
350
mJ
(Note 2)
Avalanche current
I
13
4.5
A
TOSHIBA
2-9F1C
Repetitive avalanche energy (Note 3)
Channel temperature
E
mJ
°C
°C
AR
Weight: 0.74 g (typ.)
T
150
ch
Storage temperature range
T
−55 to 150
stg
Note: Using continuously under heavy loads (e.g. the application of high temperature/current/voltage and the significant change in
temperature, etc.) may cause this product to decrease in the reliability significantly even if the operating conditions (i.e.
operating temperature/current/voltage, etc.) are within the absolute maximum ratings. Please design the appropriate
reliability upon reviewing the Toshiba Semiconductor Reliability Handbook (“Handling Precautions”/“Derating Concept and
Methods”) and individual reliability data (i.e. reliability test report and estimated failure rate, etc).
Thermal Characteristics
4
Characteristics
Symbol
Max
1.25
Unit
Thermal resistance, channel to case
R
°C/W
th (ch-c)
1
Note 1: Ensure that the channel temperature does not exceed 150°C.
Note 2: = 90 V, T = 25°C (initial), L = 3.46 mH, R = 25 Ω, I
V
DD
= 13 A
AR
ch
G
3
Note 3: Repetitive rating: pulse width limited by maximum channel temperature
This transistor is an electrostatic-sensitive device. Handle with care.
1
2009-09-29