生命周期: | Active | 包装说明: | SMALL OUTLINE, R-PSSO-G2 |
Reach Compliance Code: | unknown | ECCN代码: | EAR99 |
HTS代码: | 8541.29.00.95 | 风险等级: | 5.7 |
Is Samacsys: | N | 雪崩能效等级(Eas): | 251.9 mJ |
外壳连接: | DRAIN | 配置: | SINGLE WITH BUILT-IN DIODE |
最小漏源击穿电压: | 250 V | 最大漏极电流 (ID): | 37 A |
最大漏源导通电阻: | 0.1 Ω | FET 技术: | METAL-OXIDE SEMICONDUCTOR |
JESD-30 代码: | R-PSSO-G2 | 元件数量: | 1 |
端子数量: | 2 | 工作模式: | ENHANCEMENT MODE |
封装主体材料: | PLASTIC/EPOXY | 封装形状: | RECTANGULAR |
封装形式: | SMALL OUTLINE | 极性/信道类型: | N-CHANNEL |
最大脉冲漏极电流 (IDM): | 148 A | 认证状态: | Not Qualified |
表面贴装: | YES | 端子形式: | GULL WING |
端子位置: | SINGLE | 晶体管应用: | SWITCHING |
晶体管元件材料: | SILICON | Base Number Matches: | 1 |
型号 | 品牌 | 获取价格 | 描述 | 数据表 |
2SK3557 | SANYO |
获取价格 |
Low-Noise HF Amplifier Applications | |
2SK3557 | UTC |
获取价格 |
-15 V | |
2SK3557_12 | SANYO |
获取价格 |
High-Frequency Low-Noise Amplifi er Applications | |
2SK3557-6 | ONSEMI |
获取价格 |
TRANSISTOR,JFET,N-CHANNEL,10MA I(DSS),SOT-23 | |
2SK3557-6-TB-E | SANYO |
获取价格 |
High-Frequency Low-Noise Amplifi er Applications | |
2SK3557-6-TB-E | ONSEMI |
获取价格 |
N 沟道 JFET,15V,10 至 32mA,35mS,CP | |
2SK3557-7-TB-E | SANYO |
获取价格 |
High-Frequency Low-Noise Amplifi er Applications | |
2SK3557-7-TB-E | ONSEMI |
获取价格 |
N 沟道 JFET,15V,10 至 32mA,35mS,CP | |
2SK3559 | PANASONIC |
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Power Field-Effect Transistor, 30A I(D), 230V, 0.074ohm, 1-Element, N-Channel, Silicon, Me | |
2SK356 | ETC |
获取价格 |
TRANSISTOR | MOSFET | N-CHANNEL | 250V V(BR)DSS | 12A I(D) | TO-3 |