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2SK3557-6-TB-E PDF预览

2SK3557-6-TB-E

更新时间: 2024-10-31 11:14:03
品牌 Logo 应用领域
安森美 - ONSEMI 放大器PC光电二极管晶体管
页数 文件大小 规格书
7页 114K
描述
N 沟道 JFET,15V,10 至 32mA,35mS,CP

2SK3557-6-TB-E 技术参数

是否无铅:不含铅生命周期:Active
零件包装代码:SOT-23包装说明:SMALL OUTLINE, R-PDSO-G3
针数:3Reach Compliance Code:compliant
ECCN代码:EAR99HTS代码:8541.21.00.95
Factory Lead Time:6 weeks风险等级:0.92
Samacsys Confidence:3Samacsys Status:Released
Samacsys PartID:224377Samacsys Pin Count:3
Samacsys Part Category:TransistorSamacsys Package Category:SOT23 (3-Pin)
Samacsys Footprint Name:2SK3557-6-TB-ESamacsys Released Date:2019-03-28 06:23:18
Is Samacsys:N其他特性:LOW NOISE
配置:SINGLE最大漏极电流 (ID):0.05 A
FET 技术:JUNCTIONJEDEC-95代码:TO-236AB
JESD-30 代码:R-PDSO-G3JESD-609代码:e6
湿度敏感等级:1元件数量:1
端子数量:3工作模式:DEPLETION MODE
封装主体材料:PLASTIC/EPOXY封装形状:RECTANGULAR
封装形式:SMALL OUTLINE极性/信道类型:N-CHANNEL
表面贴装:YES端子面层:Tin/Bismuth (Sn/Bi)
端子形式:GULL WING端子位置:DUAL
晶体管应用:AMPLIFIER晶体管元件材料:SILICON
Base Number Matches:1

2SK3557-6-TB-E 数据手册

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DATA SHEET  
www.onsemi.com  
3
N-Channel JFET  
15 V, 10 to 32 mA, 35 mS, CP  
2SK3557  
1: Source  
2: Drain  
3: Gate  
1
2
SC−59 / CP3  
CASE 318BJ  
MARKING DIAGRAM  
IR  
Applications  
AM Tuner RF Amplification  
Low Noise Amplifier  
Features  
Large | yfs |  
Small Ciss  
Ultrasmall−sized Package Permitting 2SK3557−applied Sets to be  
Made Smaller and Slimer  
ELECTRICAL CONNECTION  
Ultralow Noise Figure  
These are Pb−Free Devices  
3
Product & Package Information  
Package: CP  
JEITA, JEDEC: SC−59, TO−236, SOT−23, TO−236AB  
Minimum Packing Quantity: 3,000 Pcs./Reel  
1
2
Specifications  
ORDERING INFORMATION  
ABSOLUTE MAXIMUM RATINGS (at Ta = 25°C)  
Device  
Package  
Shipping  
Parameter  
Drain−to−Source Voltage  
Gate−to−Drain Voltage  
Gate Current  
Symbol Conditions  
Ratings  
Unit  
V
2SK3557−6−TD−E  
CP  
(Pb−Free)  
3,000 / Tape &  
Reel  
V
15  
−15  
DSX  
GDS  
2SK3557−7−TD−E  
CP  
(Pb−Free)  
3,000 / Tape &  
Reel  
V
V
I
G
10  
mA  
mA  
mW  
°C  
†For information on tape and reel specifications,  
including part orientation and tape sizes, please  
refer to our Tape and Reel Packaging Specifications  
Brochure, BRD8011/D.  
Drain Current  
I
D
50  
Allowable Power Dissipation  
Junction Temperature  
Storage Temperature  
P
D
200  
Tj  
Tstg  
150  
−55 to +150  
°C  
Stresses exceeding those listed in the Maximum Ratings table may damage the  
device. If any of these limits are exceeded, device functionality should not be  
assumed, damage may occur and reliability may be affected.  
© Semiconductor Components Industries, LLC, 2013  
1
Publication Order Number:  
May, 2022 − Rev. 2  
2SK3557/D  

2SK3557-6-TB-E 替代型号

型号 品牌 替代类型 描述 数据表
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