2SK3567

更新时间： 2024-01-30 00:46:47

品牌	Logo	应用领域
东芝 - TOSHIBA		晶体晶体管场效应晶体管
页数	文件大小	规格书
3页	96K
描述
TOSHIBA Field Effect Transistor Silicon N Channel MOS Type (PIE-MOSVI)

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2SK3567 数据手册

TENTATIVE

2SK3567

TOSHIBA Field Effect Transistor Silicon N Channel MOS Type (π-MOSVI)

2SK3567

unit：ｍｍ

Switching Regulator Applications

10±0.3

2.7±0.2

φ3.2±0.2

•

Low drain-source ON resistance: R

DS (ON)

= 1.7Ω (typ.)

S (typ.)

= 600 V)

High forward transfer admittance: |Y | =

Low leakage current: I

= 100 μA (V

DSS

Enhancement-mode: V = 2.0~4.0 V (V

= 10 V, I = 1 mA)

Maximum Ratings (Ta = 25°C)

1.1

Characteristics

Symbol

Rating

Unit

0.69±0.15

2.54±0.25

Drain-source voltage

600

±30

3.5

DSS

DGR

GSS

2.54±0.25

Drain-gate voltage (R

= 20 kΩ)

Gate-source voltage

1 2 3

(Note 1)

Drain current

Pulse (t = 1 ms)

(Note 1)

1. Gate

2. Drain

3. Source

Drain power dissipation (Tc = 25°C)

Single pulse avalanche energy

TBD

(Note 2)

Avalanche current

3.5

Repetitive avalanche energy (Note 3)

Channel temperature

°C

JEDEC

―

150

Storage temperature range

-55~150

stg

JEITA

TOSHIBA

Thermal Characteristics

Characteristics

Symbol

Max

Unit

Thermal resistance, channel to case

Thermal resistance, channel to ambient

3.57

62.5

°C/W

th (ch-c)

th (ch-a)

Note 1: Please use devices on conditions that the channel temperature is below 150°C.

Note 2: V = 90 V, T = 25°C, L = TBD mH, I = 3.5 A, R = 25 Ω

DD ch

Note 3: Repetitive rating: Pulse width limited by maximum channel temperature

This transistor is an electrostatic sensitive device. Please handle with caution.

2003-04-15

12 3

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