Datasheet > 2SK3570

2SK3570

更新时间： 2024-11-01 12:53:23

品牌	Logo	应用领域
TYSEMI		晶体驱动器栅极晶体管开关脉冲局域网
页数	文件大小	规格书
1页	84K
描述
4.5V drive available. Low on-state resistance, RDS(on)1 = 12 m MAX Low gate charge

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2SK3570 数据手册

SSMMDD TTyyppee

TraMnOsiSstFIoCErsT

Product specification

2SK3570

TO-263

Unit: mm

Features

+0.2

4.57

-0.2

+0.1

1.27

-0.1

4.5V drive available.

Low on-state resistance,

R^DS(on)1= 12 m MAX. (V^GS= 10 V, I^D= 24 A)

Low gate charge

+0.1

-0.1

0.1max

1.27

Q^G= 23 nC TYP. (V^DD= 16 V, V^GS= 10 V, I^D= 48 A)

Built-in gate protection diode

Surface mount device available

+0.1

0.81

-0.1

2.54

1 Gate

+0.2

2.54

-0.2

+0.1

5.08

-0.1

+0.2

0.4

-0.2

2 Drain

3 Source

Absolute Maximum Ratings Ta = 25

Parameter

Drain to source voltage

Symbol

V^DSS

V^GSS

I^D

Rating

Unit

Gate to source voltage

Drain current

I^dp*

160

Power dissipation

T^C=25

T^A=25

P^D

1.5

150

Channel temperature

Storage temperature

T^ch

T^stg

-55 to +150

* PW 10 s,Duty Cycle 1%

Electrical Characteristics Ta = 25

Parameter

Drain cut-off current

Symbol

I^DSS

Testconditons

Min

Typ

Max

Unit

V^DS=20V,V^GS=0

V^GS= 20V,V^DS=0

V^DS=10V,I^D=1mA

VDS=10V,ID=24A

V^GS=10V,I^D=24A

V^GS=4.5V,I^D=15A

Gate leakage current

Gate cut off voltage

I^GSS

V^GS(off)

1.5

8.0

2.5

Forward transfer admittance

Y^fs

R^DS(on)1

R^DS(on)2

C^iss

Coss

C^rss

t^on

8.2

12.3

930

360

250

Drain to source on-state resistance

Input capacitance

Output capacitance

Reverse transfer capacitance

Turn-on delay time

Rise time

V^DS=10V,VGS=0,f=1MHZ

t^r

I^D=24A,V^GS(on)=10V,R^G=10 ,V^DD=10V

Turn-off delay time

Fall time

t^off

Total Gate Charge

Gate to Source Charge

Gate to Drain Charge

Q^G

V^DD= 16 V

V^GS= 10 V

I^D= 48 A

Q^GS

Q^GD

http://www.twtysemi.com

sales@twtysemi.com

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