2SK3570-S

更新时间： 2024-01-30 00:57:48

品牌	Logo	应用领域
日电电子 - NEC		晶体晶体管功率场效应晶体管开关脉冲
页数	文件大小	规格书
8页	84K
描述
SWITCHING N-CHANNEL POWER MOSFET

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技术参数
数据手册

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2SK3570-S 技术参数

是否Rohs认证：	符合	生命周期：	Transferred
包装说明：	MP-25ZK, 3 PIN	Reach Compliance Code：	compliant
风险等级：	5.68	外壳连接：	DRAIN
配置：	SINGLE WITH BUILT-IN DIODE	最小漏源击穿电压：	20 V
最大漏极电流 (ID)：	48 A	最大漏源导通电阻：	0.012 Ω
FET 技术：	METAL-OXIDE SEMICONDUCTOR	JEDEC-95代码：	TO-263
JESD-30 代码：	R-PSSO-G2	元件数量：	1
端子数量：	2	工作模式：	ENHANCEMENT MODE
封装主体材料：	PLASTIC/EPOXY	封装形状：	RECTANGULAR
封装形式：	SMALL OUTLINE	峰值回流温度（摄氏度）：	260
极性/信道类型：	N-CHANNEL	最大脉冲漏极电流 (IDM)：	160 A
认证状态：	Not Qualified	表面贴装：	YES
端子形式：	GULL WING	端子位置：	SINGLE
处于峰值回流温度下的最长时间：	10	晶体管应用：	SWITCHING
晶体管元件材料：	SILICON	Base Number Matches：	1

2SK3570-S 数据手册

DATA SHEET

MOS FIELD EFFECT TRANSISTOR

2SK3570

SWITCHING

N-CHANNEL POWER MOS FET

★

DESCRIPTION

ORDERING INFORMATION

The 2SK3570 is N-channel MOS FET device that features a

low on-state resistance and excellent switching characteristics,

designed for low voltage high current applications such as

DC/DC converter with synchronous rectifier.

PART NUMBER

2SK3570

PACKAGE

TO-220AB

TO-262

2SK3570-S

2SK3570-ZK

2SK3570-Z

TO-263

Note

FEATURES

TO-220SMD

•4.5V drive available.

Note TO-220SMD package is produced only in Japan.

•Low on-state resistance,

R^DS(on)1= 12 mΩ MAX. (V^GS= 10 V, I^D= 24 A)

•Low gate charge

Q^G= 23 nC TYP. (V^DD= 16 V, V^GS= 10 V, I^D= 48 A)

•Built-in gate protection diode

•Surface mount device available

ABSOLUTE MAXIMUM RATINGS (T^A= 25°C)

Drain to Source Voltage (V^GS= 0 V)

Gate to Source Voltage (V^DS= 0 V)

V^DSS

V^GSS

±20

Drain Current (DC) (T^C= 25°C)

I^D(DC)

I^D(pulse)

P^T1

±48

±160

1.5

Note

Drain Current (pulse)

Total Power Dissipation (T^A= 25°C)

Total Power Dissipation (T^C= 25°C)

Channel Temperature

°C

P^T2

T^ch

150

Storage Temperature

Tstg

−55 to +150

°C

Note PW ≤ 10 µs, Duty Cycle ≤ 1%

The information in this document is subject to change without notice. Before using this document, please

confirm that this is the latest version.

Not all devices/types available in every country. Please check with local NEC representative for

availability and additional information.

Document No. D16256EJ2V0DS00 (2nd edition)

Date Published September 2002 NS CP (K)

Printed in Japan

The mark ! shows major revised points.

2002

12 3 4 5 6 7 8

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