Datasheet > 2SK3571

2SK3571

更新时间： 2024-11-06 12:53:23

品牌	Logo	应用领域
TYSEMI		晶体驱动器栅极晶体管开关脉冲局域网
页数	文件大小	规格书
1页	93K
描述
4.5V drive available. Low on-state resistance, RDS(on)1 = 9m MAX. Low gate charge

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数据手册

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2SK3571 数据手册

SSMMDD TTyyppee

TraMnOsiSstFIoCErsT

Product specification

2SK3571

TO-263

Unit: mm

+0.2

4.57

-0.2

+0.1

1.27

-0.1

Features

4.5V drive available.

Low on-state resistance,

R^DS(on)1= 9m MAX. (V^GS= 10 V, I^D= 24 A)

Low gate charge

+0.1

-0.1

0.1max

1.27

+0.1

0.81

-0.1

Q^G= 21 nC TYP. (V^DD= 16 V, V^GS= 10 V, I^D= 48 A)

Built-in gate protection diode

Surface mount device available

2.54

1 Gate

+0.2

2.54

-0.2

+0.1

5.08

-0.1

+0.2

0.4

-0.2

2 Drain

3 Source

Absolute Maximum Ratings Ta = 25

Parameter

Drain to source voltage

Symbol

V^DSS

V^GSS

I^D

Rating

Unit

Gate to source voltage

192

Drain current

I^dp*

Power dissipation

T^C=25

T^A=25

P^D

1.5

Channel temperature

Storage temperature

T^ch

150

T^stg

-55 to +150

* PW 10 s,Duty Cycle 1%

Electrical Characteristics Ta = 25

Parameter

Drain cut-off current

Symbol

I^DSS

Testconditons

Min

Typ

Max

Unit

V^DS=20V,V^GS=0

V^GS= 20V,V^DS=0

V^DS=10V,I^D=1mA

V^DS=10V,I^D=24A

VGS=10V,ID=24A

V^GS=4.5V,I^D=18A

Gate leakage current

Gate cut off voltage

I^GSS

V^GS(off)

1.5

2.5

Forward transfer admittance

Y^fs

RDS(on)1

R^DS(on)2

C^iss

C^oss

C^rss

t^on

7.0

9.0

Drain to source on-state resistance

Input capacitance

Output capacitance

Reverse transfer capacitance

Turn-on delay time

Rise time

1100

450

160

V^DS=10V,V^GS=0,f=1MHZ

t^r

I^D=24A,V^GS(on)=10V,R^G=10 ,V^DD=10V

Turn-off delay time

Fall time

t^off

Total Gate Charge

Gate to Source Charge

Gate to Drain Charge

Q^G

V^DD= 16 V

V^GS= 10 V

ID = 48 A

Q^GS

Q^GD

4.2

http://www.twtysemi.com

sales@twtysemi.com

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4008-318-123

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与2SK3571相关器件

型号	品牌	获取价格	描述	数据表
2SK3571-AZ	RENESAS	获取价格	TRANSISTOR,MOSFET,N-CHANNEL,20V V(BR)DSS,48A I(D),TO-220AB
2SK3571-S	NEC	获取价格	SWITCHING N-CHANNEL POWER MOSFET
2SK3571-Z	NEC	获取价格	SWITCHING N-CHANNEL POWER MOSFET
2SK3571-ZK	NEC	获取价格	SWITCHING N-CHANNEL POWER MOSFET
2SK3571-ZK-AZ	NEC	获取价格	Power Field-Effect Transistor, 48A I(D), 20V, 0.009ohm, 1-Element, N-Channel, Silicon, Met
2SK3572	NEC	获取价格	SWITCHING N-CHANNEL POWER MOSFET
2SK3572	KEXIN	获取价格	MOS Field Effect Transistor
2SK3572	TYSEMI	获取价格	4.5V drive available. Low on-state resistance,RDS(on)1 = 5.7m MAX Low gate charge
2SK3572-AZ	NEC	获取价格	Power Field-Effect Transistor, 80A I(D), 20V, 0.0099ohm, 1-Element, N-Channel, Silicon, Me
2SK3572-S	NEC	获取价格	SWITCHING N-CHANNEL POWER MOSFET