2SK3561(Q)

更新时间： 2024-10-30 13:02:11

品牌	Logo	应用领域
东芝 - TOSHIBA		晶体晶体管场效应晶体管
页数	文件大小	规格书
6页	228K
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中文翻译

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数据手册

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2SK3561(Q) 数据手册

2SK3561

TOSHIBA Field Effect Transistor Silicon N Channel MOS Type (π-MOSVI)

2SK3561

Switching Regulator Applications

Unit: mm

•

Low drain-source ON resistance: R

= 0.75Ω (typ.)

DS (ON)

High forward transfer admittance: |Y | = 6.5S (typ.)

= 100 μA (V

Low leakage current: I

= 500 V)

DSS

Enhancement mode: V = 2.0~4.0 V (V

= 10 V, I = 1 mA)

Maximum Ratings

(Ta 25°C)

Characteristics

Symbol

Rating

Unit

Drain-source voltage

500

±30

DSS

Drain-gate voltage (R

= 20 kΩ)

DGR

Gate-source voltage

GSS

(Note 1)

Drain current

Pulse (t = 1 ms)

(Note 1)

1: Gate

2: Drain

3: Source

Drain power dissipation (Tc = 25°C)

Single pulse avalanche energy

312

(Note 2)

Avalanche current

JEDEC

JEITA

―

Repetitive avalanche energy (Note 3)

Channel temperature

°C

SC-67

2-10U1B

Weight : 1.7 g (typ.)

150

TOSHIBA

Storage temperature range

-55~150

stg

Thermal Characteristics

Characteristics

Symbol

Max

Unit

Thermal resistance, channel to case

Thermal resistance, channel to ambient

3.125

62.5

°C/W

th (ch-c)

th (ch-a)

Note 1: Ensure that the channel temperature does not exceed 150℃.

Note 2:

= 90 V, T = 25°C(initial), L = 8.3 mH, I = 8 A, R = 25 Ω

Note 3: Repetitive rating: pulse width limited by maximum channel temperature

This transistor is an electrostatic-sensitive device. Please handle with caution.

2005-01-26

12 3 4 5 6

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