Datasheet > 2SK3561_06

2SK3561_06

更新时间： 2024-10-30 04:26:31

品牌	Logo	应用领域
东芝 - TOSHIBA		稳压器开关
页数	文件大小	规格书
6页	229K
描述
Silicon N Channel MOS Type Switching Regulator Applications

阅读下载

中文翻译

获取价格

数据手册

如果您发现信息不准确，欢迎纠错

2SK3561_06 数据手册

2SK3561

TOSHIBA Field Effect Transistor Silicon N Channel MOS Type (π-MOSVI)

2SK3561

Switching Regulator Applications

Unit: mm

•

Low drain-source ON resistance: R

High forward transfer admittance: |Y | = 6.5S (typ.)

= 0.75Ω (typ.)

DS (ON)

Low leakage current: I

= 100 μA (V

= 500 V)

DSS

Enhancement mode: V = 2.0~4.0 V (V

= 10 V, I = 1 mA)

Absolute Maximum Ratings (Ta = 25°C)

Characteristics

Drain-source voltage

Symbol

Rating

Unit

500

±30

DSS

Drain-gate voltage (R

Gate-source voltage

= 20 kΩ)

DGR

GSS

(Note 1)

1: Gate

2: Drain

3: Source

Drain current

Pulse (t = 1 ms)

(Note 1)

Drain power dissipation (Tc = 25°C)

Single pulse avalanche energy

312

JEDEC

JEITA

―

(Note 2)

SC-67

2-10U1B

Weight : 1.7 g (typ.)

Avalanche current

Repetitive avalanche energy (Note 3)

Channel temperature

°C

TOSHIBA

150

Storage temperature range

-55~150

stg

Note: Using continuously under heavy loads (e.g. the application of high temperature/current/voltage and the significant change in

temperature, etc.) may cause this product to decrease in the reliability significantly even if the operating conditions (i.e.

operating temperature/current/voltage, etc.) are within the absolute maximum ratings. Please design the appropriate

reliability upon reviewing the Toshiba Semiconductor Reliability Handbook (“Handling Precautions”/Derating Concept and

Methods) and individual reliability data (i.e. reliability test report and estimated failure rate, etc).

Thermal Characteristics

Characteristics

Symbol

Max

Unit

Thermal resistance, channel to case

Thermal resistance, channel to ambient

3.125

62.5

°C/W

th (ch-c)

th (ch-a)

Note 1: Ensure that the channel temperature does not exceed 150℃.

Note 2: = 90 V, T = 25°C(initial), L = 8.3 mH, I = 8 A, R = 25 Ω

Note 3: Repetitive rating: pulse width limited by maximum channel temperature

This transistor is an electrostatic-sensitive device. Please handle with caution.

2006-11-06

12 3 4 5 6

中文翻译

下载PDF

与2SK3561_06相关器件

型号	品牌	获取价格	描述	数据表
2SK3561_09	TOSHIBA	获取价格	Switching Regulator Applications
2SK3562	TOSHIBA	获取价格	TOSHIBA Field Effect Transistor Silicon N Channel MOS Type (PIE-MOSVI)
2SK3562_06	TOSHIBA	获取价格	Silicon N Channel MOS Type Switching Regulator Applications
2SK3562_10	TOSHIBA	获取价格	Switching Regulator Applications
2SK3563	TOSHIBA	获取价格	TOSHIBA Field Effect Transistor Silicon N Channel MOS Type (PIE-MOS?)
2SK3563(Q)	TOSHIBA	获取价格	MOSFETs N-Ch 500V 5A Rdson 1.5 Ohm
2SK3563_06	TOSHIBA	获取价格	Silicon N Channel MOS Type Switching Regulator Applications
2SK3563_09	TOSHIBA	获取价格	Switching Regulator Applications
2SK3564	TOSHIBA	获取价格	TOSHIBA Field Effect Transistor Silicon N Channel MOS Type (PIE-MOS4)
2SK3564_06	TOSHIBA	获取价格	Silicon N Channel MOS Type Switching Regulator Applications