Datasheet > 2SK3563(Q)

2SK3563(Q)

更新时间： 2024-09-13 20:09:59

品牌	Logo	应用领域
东芝 - TOSHIBA		/
页数	文件大小	规格书
6页	205K
描述
MOSFETs N-Ch 500V 5A Rdson 1.5 Ohm

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中文翻译

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技术参数
数据手册
替代型号

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2SK3563(Q) 技术参数

生命周期：	Obsolete	Reach Compliance Code：	unknown
风险等级：	5.59	Base Number Matches：	1

2SK3563(Q) 数据手册

2SK3563

TOSHIBA Field Effect Transistor Silicon N Channel MOS Type (π-MOSVI)

2SK3563

Switching Regulator Applications

Unit: mm

•

Low drain-source ON resistance: R

= 1.35 Ω (typ.)

DS (ON)

High forward transfer admittance: |Y | = 3.5 S (typ.)

Low leakage current: I

= 100 μA (max) (V

= 500 V)

DSS

Enhancement mode: V = 2.0 to 4.0 V (V

= 10 V, I = 1 mA)

Absolute Maximum Ratings (Ta = 25°C)

Characteristics

Drain-source voltage

Symbol

Rating

Unit

500

±30

DSS

Drain-gate voltage (R

Gate-source voltage

= 20 kΩ)

DGR

GSS

(Note 1)

Drain current

Pulse (t = 1 ms)

1: Gate

2: Drain

3: Source

(Note 1)

Drain power dissipation (Tc = 25°C)

JEDEC

JEITA

―

Single pulse avalanche energy

180

(Note 2)

SC-67

2-10U1B

Weight : 1.7 g (typ.)

Avalanche current

3.5

TOSHIBA

Repetitive avalanche energy (Note 3)

Channel temperature

°C

150

Storage temperature range

-55~150

stg

Note: Using continuously under heavy loads (e.g. the application of high temperature/current/voltage and the significant change in

temperature, etc.) may cause this product to decrease in the reliability significantly even if the operating conditions (i.e.

operating temperature/current/voltage, etc.) are within the absolute maximum ratings. Please design the appropriate

reliability upon reviewing the Toshiba Semiconductor Reliability Handbook (“Handling Precautions”/Derating Concept and

Methods) and individual reliability data (i.e. reliability test report and estimated failure rate, etc).

Thermal Characteristics

Characteristics

Symbol

Max

Unit

Thermal resistance, channel to case

Thermal resistance, channel to ambient

3.57

62.5

°C/W

th (ch-c)

th (ch-a)

Note 1: Ensure that the channel temperature does not exceed 150℃.

Note 2: = 90 V, T = 25°C(initial), L = 12.2 mH, I = 5 A, R = 25 Ω

Note 3: Repetitive rating: pulse width limited by maximum channel temperature

This transistor is an electrostatic-sensitive device. Please handle with caution.

2009-09-29

12 3 4 5 6

中文翻译

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2SK3563(Q) 替代型号

型号	品牌	替代类型	描述	数据表
STP5NK50ZFP	STMICROELECTRONICS	功能相似	N-CHANNEL500V-1.22ohm-4.4ATO-220/FP/DPAK/IPAK

与2SK3563(Q)相关器件

型号	品牌	获取价格	描述	数据表
2SK3563_06	TOSHIBA	获取价格	Silicon N Channel MOS Type Switching Regulator Applications
2SK3563_09	TOSHIBA	获取价格	Switching Regulator Applications
2SK3564	TOSHIBA	获取价格	TOSHIBA Field Effect Transistor Silicon N Channel MOS Type (PIE-MOS4)
2SK3564_06	TOSHIBA	获取价格	Silicon N Channel MOS Type Switching Regulator Applications
2SK3564_09	TOSHIBA	获取价格	Switching Regulator Applications
2SK3565	TOSHIBA	获取价格	TOSHIBA Field Effect Transistor Silicon N Channel MOS Type (PIE-MOS?)
2SK3565_06	TOSHIBA	获取价格	Silicon N Channel MOS Type Switching Regulator Applications
2SK3565_09	TOSHIBA	获取价格	Switching Regulator Applications
2SK3566	HITACHI	获取价格	Silicon N-Channel MOS FET, High Speed Power Switching
2SK3566	TOSHIBA	获取价格	Silicon N Channel MOS Type Switching Regulator Applications

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