2SK3566
TOSHIBA Field Effect Transistor Silicon N Channel MOS Type (π-MOSIV)
2SK3566
Switching Regulator Applications
Unit: mm
•
•
•
•
Low drain-source ON-resistance: R
= 5.6 Ω (typ.)
DS (ON)
High forward transfer admittance: |Y | = 2.0 S (typ.)
fs
Low leakage current: I
= 100 μA (max) (V
= 720 V)
DSS
DS
Enhancement mode: V = 2.0 to 4.0 V (V
= 10 V, I = 1 mA)
D
th
DS
Absolute Maximum Ratings (Ta = 25°C)
Characteristics
Drain-source voltage
Symbol
Rating
Unit
V
900
900
±30
2.5
V
V
V
DSS
Drain-gate voltage (R
Gate-source voltage
= 20 kΩ)
V
GS
DGR
V
GSS
1: Gate
2: Drain
DC
(Note 1)
I
D
Drain current
A
3: Source
Pulse (t = 1 ms)
I
7.5
40
DP
(Note 1)
Drain power dissipation (Tc = 25°C)
JEDEC
JEITA
―
P
W
D
AS
AR
Single pulse avalanche energy
SC-67
2-10U1B
Weight : 1.7 g (typ.)
E
216
mJ
(Note 2)
TOSHIBA
Avalanche current
I
2.5
4
A
Repetitive avalanche energy (Note 3)
Channel temperature
E
mJ
°C
°C
AR
T
150
ch
Storage temperature range
T
-55 to 150
stg
Note: Using continuously under heavy loads (e.g. the application of high temperature/current/voltage and the significant change in
temperature, etc.) may cause this product to decrease in the reliability significantly even if the operating conditions (i.e.
operating temperature/current/voltage, etc.) are within the absolute maximum ratings. Please design the appropriate
reliability upon reviewing the Toshiba Semiconductor Reliability Handbook (“Handling Precautions”/“Derating Concept and
Methods”) and individual reliability data (i.e. reliability test report and estimated failure rate, etc).
2
Thermal Characteristics
Characteristics
Symbol
Max
Unit
Thermal resistance, channel to case
Thermal resistance, channel to ambient
R
3.125
62.5
°C/W
°C/W
th (ch-c)
R
th (ch-a)
1
Note 1: Please use devices on conditions that the channel temperature is below 150°C.
Note 2: = 90 V, T = 25°C, L = 63.4 mH, I = 2.5 A, R = 25 Ω
V
DD
ch
AR
G
3
Note 3: Repetitive rating: Pulse width limited by maximum channel temperature
This transistor is an electrostatic sensitive device. Please handle with caution.
1
2010-05-06