Datasheet > 2SK3560

2SK3560

更新时间： 2024-10-30 12:53:23

品牌	Logo	应用领域
TYSEMI		晶体晶体管开关脉冲
页数	文件大小	规格书
2页	104K
描述
Low on-resistance, low Qg High avalanche resistance For high-speed switching

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数据手册

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2SK3560 数据手册

SMD Type

TransistIoCrs

Product specification

2SK3560

TO-263

Unit: mm

+0.2

4.57

-0.2

+0.1

1.27

-0.1

Features

Low on-resistance, low Qg

High avalanche resistance

For high-speed switching

+0.1

1.27

-0.1

0.1max

+0.1

0.81

-0.1

2.54

1 Gate

+0.2

2.54

-0.2

+0.1

5.08

-0.1

+0.2

0.4

-0.2

2 Drain

3 Source

Absolute Maximum Ratings Ta = 25

Parameter

Drain-source surrender voltage

Gate-source surrender voltage

Drain current

Symbol

V^DSS

V^GSS

I^D

Rating

230

Unit

Peak drain current

I^DP

120

Power dissipation Ta = 25

Power dissipation

P^D

Channel temperature

T^ch

150

Storage temperature

Tstg

-55 to +150

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