Datasheet > 2SK3554

2SK3554

更新时间： 2024-09-14 22:52:59

品牌	Logo	应用领域
富士电机 - FUJI		/
页数	文件大小	规格书
4页	114K
描述
N-CHANNEL SILICON POWER MOSFET

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中文翻译

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数据手册

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2SK3554 数据手册

2SK3554-01

FUJI POWER MOSFET

N-CHANNEL SILICON POWER MOSFET

Outline Drawings

Super FAP-G Series

TO-220AB

Features

High speed switching

Low on-resistance

No secondary breadown

Low driving power

Avalanche-proof

Applications

Switching regulators

UPS (Uninterruptible Power Supply)

DC-DCconverters

Maximum ratings and characteristicAbsolute maximum ratings

(Tc=25°C unless otherwise specified)

Item

Symbol

VDS

Ratings

250

Unit

Drain-source voltage

VDSX *5

220

±25

±100

±30

Continuous drain current

Pulsed drain current

Equivalent circuit schematic

ID(puls]

VGS

Gate-source voltage

Repetitive or non-repetitive

Maximum Avalanche Energy

Maximum Drain-Source dV/dt

Peak Diode Recovery dV/dt

Max. power dissipation

IAR *2

Drain(D)

EAS*1

372

kV/µs

dVDS/dt *4

dV/dt *3

PD Ta=25

Tc=25

Tch

°C

2.02

Gate(G)

135

+150

-55 to +150

Source(S)

Operating and storage

temperature range

°C

Tstg

*1 L=0.67mH, Vcc=48V *2 Tch=150°C

*3 IF=-ID, -di/dt=50A/µs, Vcc=BVDSS, Tch=150°C

*4 VDS 250V *5 VGS=-30V

Electrical characteristics (Tc =25°C unless otherwise specified)

Min.

Typ.

Max. Units

Symbol

V(BR)DSS

VGS(th)

Test Conditions

Item

ID=250 A

VGS=0V

Drain-source breakdown voltaget

Gate threshold voltage

250

ID= 250 A

VDS=VGS

3.0

5.0

Tch=25°C

µA

VDS=250V VGS=0V

VDS=200V VGS=0V

Zero gate voltage drain current

IDSS

Tch=125°C

250

100

IGSS

RDS(on)

gfs

VDS=0V

Gate-source leakage current

Drain-source on-state resistance

Forward transcondutance

Input capacitance

VGS=±30V

ID=12.5A

VGS=10V

mΩ

ID=12.5A VDS=25V

VDS=75V

Ciss

2000

220

3000

330

Coss

Crss

td(on)

VGS=0V

Output capacitance

f=1MHz

Reverse transfer capacitance

Turn-on time ton

VCC=72V ID=12.5A

VGS=10V

td(off)

Turn-off time toff

RGS=10 Ω

QGS

QGD

IAV

VCC=72V

ID=12A

Total Gate Charge

Gate-Source Charge

Gate-Drain Charge

VGS=10V

L=100 H Tch=25°C

Avalanche capability

Diode forward on-voltage

Reverse recovery time

Reverse recovery charge

VSD

trr

Qrr

IF=25A VGS=0V Tch=25°C

IF=25A VGS=0V

-di/dt=100A/µs

1.10

1.65

0.45

1.5

µs

µC

Tch=25°C

Thermalcharacteristics

Item

Min.

Typ.

Max. Units

Symbol

Test Conditions

Rth(ch-c)

channel to case

0.926

°C/W

Thermal resistance

Rth(ch-a)

channel to ambient

62.0

°C/W

12 3 4

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