2SK3550-01R
200304
FUJI POWER MOSFET
N-CHANNEL SILICON POWER MOSFET
Outline Drawings [mm]
Super FAP-G Series
Features
High speed switching
Low on-resistance
No secondary breadown
Low driving power
Avalanche-proof
Applications
Switching regulators
UPS (Uninterruptible Power Supply)
DC-DCconverters
Maximum ratings and characteristicAbsolute maximum ratings
(Tc=25°C unless otherwise specified)
Item
Symbol
VDS
Ratings
900
Unit
V
Drain-source voltage
V
VDSX *5
ID
900
±10
±40
±30
10
Equivalent circuit schematic
A
Continuous drain current
Pulsed drain current
A
ID(puls]
VGS
Drain(D)
V
Gate-source voltage
A
Repetitive or non-repetitive
Maximum Avalanche Energy
Maximum Drain-Source dV/dt
Peak Diode Recovery dV/dt
Max. power dissipation
IAR
*2
*1
mJ
kV/µs
kV/µs
W
EAS
330
40
dVDS/dt *4
dV/dt
*3
5
Gate(G)
°C
°C
PD Ta=25
Tc=25
Tch
3.13
Source(S)
130
+150
Operating and storage
temperature range
Isolation Voltage
°C
-55 to +150
Tstg
°C
VISO *6
2
kVrms
<
*1 L=6.06mH, Vcc=90V,Tch=25°C, See to Avalanche Energy Graph *2 Tch 150°C
=
<
<
<
<
*4 VDS 900V *5 VGS=-30V *6 t=60sec, f=60Hz
*3 IF -ID, -di/dt=50A/µs, Vcc BVDSS, Tch 150°C
=
=
=
=
Electrical characteristics (Tc =25°C unless otherwise specified)
Min.
Typ.
Max. Units
Symbol
V(BR)DSS
VGS(th)
Item
Test Conditions
Drain-source breakdown voltaget
Gate threshold voltage
µ
V
ID= 250 A
VGS=0V
VDS=VGS
900
µ
V
ID= 250 A
3.0
5.0
µA
25
VDS=900V VGS=0V
Tch=25°C
Zero gate voltage drain current
IDSS
Tch=125°C
250
VDS=720V VGS=0V
IGSS
RDS(on)
gfs
VGS=±30V
VDS=0V
nA
Gate-source leakage current
Drain-source on-state resistance
Forward transcondutance
Input capacitance
100
ID=5A VGS=10V
ID=5A VDS=25V
VDS=25V
Ω
S
1.08
1.40
6
12
1250
160
12
Ciss
pF
1900
Coss
Crss
td(on)
tr
Output capacitance
240
18
39
35
90
26
52
VGS=0V
Reverse transfer capacitance
Turn-on time ton
f=1MHz
VCC=600V ID=5A
ns
26
VGS=10V
23
td(off)
tf
Turn-off time toff
60
RGS=10 Ω
17
QG
nC
34.5
Total Gate Charge
VCC=450V
ID=10A
QGS
QGD
IAV
5
7.5
18
Gate-Source Charge
Gate-Drain Charge
12
VGS=10V
10
A
Avalanche capability
Diode forward on-voltage
Reverse recovery time
Reverse recovery charge
L=6.06mH Tch=25°C
VSD
trr
Qrr
0.90
1.50
V
IF=10A VGS=0V Tch=25°C
IF=10A VGS=0V
3.1
µs
µC
17.0
-di/dt=100A/µs
Tch=25°C
Thermalcharacteristics
Item
Symbol
Test Conditions
Min.
Typ.
Max. Units
Rth(ch-c)
channel to case
0.962
°C/W
Thermal resistance
Rth(ch-a)
channel to ambient
40.0
°C/W
1