Datasheet > 2SK3557

2SK3557

更新时间： 2024-03-03 10:08:58

品牌	Logo	应用领域
友顺 - UTC		/
页数	文件大小	规格书
3页	114K
描述
-15 V

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数据手册

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2SK3557 数据手册

UNISONIC TECHNOLOGIES CO., LTD

2SK3557

Preliminary

JFET

FIELD EFFECT TRANSISTOR

SILICON N-CHANNEL

JUNCTION TYPE



DESCRIPTION

The UTC 2SK3557 is an N-channel junction silicon FET, it

uses UTC’s advanced technology to provide the customers with

low I_GSSand low C_RSS

The UTC 2SK3557 is suitable for audio frequency low noise

amplifier, impedance conversion, infrared sensor applications.



FEATURES

* Small Ciss

* Ultralow Noise Figure

* High breakdown voltage: V_GDS=−15V

* High input impedance: I_GSS=−1nA (max) at V_GS=−10V

 ORDERING INFORMATION

Ordering Number

Pin Assignment

Package

SOT-23

Packing

Tape Reel

Lead Free

Halogen Free

2SK3557L-x-AE3-R

2SK3557G-x-AE3-R

Note: Pin Assignment: S: Source

D: Drain

G: Gate

2SK3557G-x-AE3-R

(1) R: Tape Reel

(2) AE3: SOT-23

(1)Packing Type

(2)Package Type

(3)Rank

(3) x: refer to Classification of I_DSS

(4)G: Halogen Free and Lead Free, L: Lead Free

(4)Green Package

 MARKING

www.unisonic.com.tw

1 of 3

QW-R206-120.a

12 3

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与2SK3557相关器件

型号	品牌	获取价格	描述	数据表
2SK3557_12	SANYO	获取价格	High-Frequency Low-Noise Amplifi er Applications
2SK3557-6	ONSEMI	获取价格	TRANSISTOR,JFET,N-CHANNEL,10MA I(DSS),SOT-23
2SK3557-6-TB-E	SANYO	获取价格	High-Frequency Low-Noise Amplifi er Applications
2SK3557-6-TB-E	ONSEMI	获取价格	N 沟道 JFET，15V，10 至 32mA，35mS，CP
2SK3557-7-TB-E	SANYO	获取价格	High-Frequency Low-Noise Amplifi er Applications
2SK3557-7-TB-E	ONSEMI	获取价格	N 沟道 JFET，15V，10 至 32mA，35mS，CP
2SK3559	PANASONIC	获取价格	Power Field-Effect Transistor, 30A I(D), 230V, 0.074ohm, 1-Element, N-Channel, Silicon, Me
2SK356	ETC	获取价格	TRANSISTOR \| MOSFET \| N-CHANNEL \| 250V V(BR)DSS \| 12A I(D) \| TO-3
2SK3560	PANASONIC	获取价格	Silicon N-channel power MOSFET For PDP/For high-speed switching
2SK3560	KEXIN	获取价格	Silicon N-channel power MOSFET