Datasheet > 2SK3557_12

2SK3557_12

更新时间： 2024-10-30 12:50:47

品牌	Logo	应用领域
三洋 - SANYO		放大器功率放大器
页数	文件大小	规格书
6页	408K
描述
High-Frequency Low-Noise Amplifi er Applications

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数据手册

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2SK3557_12 数据手册

2SK3557

Ordering number : EN7169A

SANYO Sem iconductors

DATA S HEET

N-Channel Junctin Silicon FET

High-Frequency Low-Noise

Ampliﬁer Applications

2SK3557

Applications

•

AM tuner RF ampliﬁcation

•

Low noise ampliﬁer

Features

•

Large yfs

•

Small Ciss

Ultrasmall-sized package permitting 2SK3557-applied sets to be made smaller and slimer

Ultralow noise ﬁgure

Speciﬁcations

at Ta=25°C

Absolute Maximum Ratings

Parameter

Drain-to-Source Voltage

Gate-to-Drain Voltage

Gate Current

Symbol

Conditions

Ratings

Unit

--15

DSX

GDS

°C

Drain Current

Allowable Power Dissipation

Junction Temperature

Storage Temperature

200

150

Tstg

--55 to +150

°C

Package Dimensions

unit : mm (typ)

Product & Package Information

• Package

: CP

7013A-011

• JEITA, JEDEC

: SC-59, TO-236, SOT-23, TO-236AB

•

Minimum Packing Quantity : 3,000 pcs./reel

2.9

0.1

2SK3557-6-TB-E

2SK3557-7-TB-E

Packing Type: TL

Marking

0.95

0.4

1 : Source

2 : Drain

3 : Gate

Electrical Connection

SANYO : CP

http://semicon.sanyo.com/en/network

No.7169-1/6

62012 TKIM/60502 TSIM TA-3622

12 3 4 5 6

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与2SK3557_12相关器件

型号	品牌	获取价格	描述	数据表
2SK3557-6	ONSEMI	获取价格	TRANSISTOR,JFET,N-CHANNEL,10MA I(DSS),SOT-23
2SK3557-6-TB-E	SANYO	获取价格	High-Frequency Low-Noise Amplifi er Applications
2SK3557-6-TB-E	ONSEMI	获取价格	N 沟道 JFET，15V，10 至 32mA，35mS，CP
2SK3557-7-TB-E	SANYO	获取价格	High-Frequency Low-Noise Amplifi er Applications
2SK3557-7-TB-E	ONSEMI	获取价格	N 沟道 JFET，15V，10 至 32mA，35mS，CP
2SK3559	PANASONIC	获取价格	Power Field-Effect Transistor, 30A I(D), 230V, 0.074ohm, 1-Element, N-Channel, Silicon, Me
2SK356	ETC	获取价格	TRANSISTOR \| MOSFET \| N-CHANNEL \| 250V V(BR)DSS \| 12A I(D) \| TO-3
2SK3560	PANASONIC	获取价格	Silicon N-channel power MOSFET For PDP/For high-speed switching
2SK3560	KEXIN	获取价格	Silicon N-channel power MOSFET
2SK3560	TYSEMI	获取价格	Low on-resistance, low Qg High avalanche resistance For high-speed switching