Datasheet > 2SK3437_10

2SK3437_10

更新时间： 2024-11-18 07:32:31

品牌	Logo	应用领域
东芝 - TOSHIBA		驱动器转换器继电器电机 DC-DC转换器
页数	文件大小	规格书
6页	209K
描述
DC-DC Converter, Relay Drive and Motor Drive Applications

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中文翻译

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数据手册

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2SK3437_10 数据手册

2SK3437

TOSHIBA Field Effect Transistor Silicon N-Channel MOS Type (π-MOSV)

2SK3437

DC-DC Converter, Relay Drive and Motor Drive

Applications

Unit: mm

•

Low drain-source ON-resistance: R

= 0.74 Ω (typ.)

DS (ON)

High forward transfer admittance: |Y | = 4.5 S (typ.)

Low leakage current: I

= 100 μA (max) (V

= 600 V)

DSS

Enhancement mode: V = 3.0 to 5.0 V (V

= 10 V, I = 1 mA)

Absolute Maximum Ratings (Ta = 25°C)

Characteristics

Drain-source voltage

Symbol

Rating

Unit

600

±30

DSS

Drain-gate voltage (R

Gate-source voltage

= 20 kΩ)

DGR

GSS

DC (Note 1)

Drain current

Pulse

(Note 1)

JEDEC

JEITA

―

Drain power dissipation (Tc = 25°C)

Single pulse avalanche energy

252

(Note 2)

TOSHIBA

2-10S1B

Avalanche current

Weight: 1.5 g (typ.)

Repetitive avalanche energy (Note 3)

Channel temperature

°C

150

Storage temperature range

−55 to 150

stg

Note: Using continuously under heavy loads (e.g. the application of high

temperature/current/voltage and the significant change in temperature,

etc.) may cause this product to decrease in the reliability significantly even

if the operating conditions (i.e. operating temperature/current/voltage,

etc.) are within the absolute maximum ratings. Please design the

appropriate reliability upon reviewing the Toshiba Semiconductor

Reliability Handbook (“Handling Precautions”/“Derating Concept and

Methods”) and individual reliability data (i.e. reliability test report and

estimated failure rate, etc).

Thermal Characteristics

Characteristics

Symbol

Max

Unit

Thermal resistance, channel to case

Thermal resistance, channel to ambient

1.56

83.3

°C/W

th (ch-c)

JEDEC

JEITA

―

th (ch-a)

Note 1: Ensure that the channel temperature does not exceed 150°C.

Note 2: = 90 V, T = 25°C (initial), L = 4.41 mH, R = 25 Ω,

TOSHIBA

2-10S2B

= 10 A

Weight: 1.5 g (typ.)

Note 3: Repetitive rating: Pulse width limited by maximum channel

temperature

This transistor is an electrostatic-sensitive device. Please handle with caution.

2010-01-29

12 3 4 5 6

中文翻译

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与2SK3437_10相关器件

型号	品牌	获取价格	描述	数据表
2SK3438	TOSHIBA	获取价格	Silicon N Channel MOS Type DC-DC Converter, Relay Drive and Motor Drive Applications
2SK3438_10	TOSHIBA	获取价格	DC-DC Converter, Relay Drive and Motor Drive
2SK3439	TOSHIBA	获取价格	DC-DC Converter Relay Drive and Motor Drive Applications
2SK3439_06	TOSHIBA	获取价格	Silicon N Channel MOS Type DC-DC Converter Applications
2SK3439_09	TOSHIBA	获取价格	DC-DC Converter Applications
2SK3440	TOSHIBA	获取价格	Switching Regulator, DC-DC Converter Applications Motor Drive Applications
2SK3440_06	TOSHIBA	获取价格	Silicon N Channel MOS Type Switching Regulator, DC-DC Converter Applications
2SK3440_09	TOSHIBA	获取价格	Switching Regulator, DC-DC Converter Applications
2SK3441	TOSHIBA	获取价格	TOSHIBA Field Effect Transistor Silicon N Channel MOS Type (U-MOSII)
2SK3441_06	TOSHIBA	获取价格	Silicon N Channel MOS Type DC-DC Converter Applications

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