Datasheet > 2SK3441_06

2SK3441_06

更新时间： 2024-10-14 04:26:31

品牌	Logo	应用领域
东芝 - TOSHIBA		转换器
页数	文件大小	规格书
6页	189K
描述
Silicon N Channel MOS Type DC-DC Converter Applications

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2SK3441_06 数据手册

2SK3441

TOSHIBA Field Effect Transistor Silicon N Channel MOS Type (U-MOSII)

2SK3441

DC-DC Converter Applications

Unit: mm

Relay Drive and Motor Drive Applications

•

Low drain-source ON resistance: R

= 4.5 mΩ (typ.)

DS (ON)

High forward transfer admittance: |Y | = 80 S (typ.)

Low leakage current: I

= 100 μA (max) (V

= 60 V)

DSS

Enhancement mode: V = 1.3 to 2.5 V (V

= 10 V, I = 1 mA)

Absolute Maximum Ratings (Ta = 25°C)

Characteristics

Drain-source voltage

Symbol

Rating

Unit

DSS

Drain-gate voltage (R

Gate-source voltage

= 20 kΩ)

DGR

±20

GSS

(Note 1)

Drain current

Pulse (t 1 ms)

300

125

468

(Note 1)

Drain power dissipation (Tc = 25°C)

JEDEC

JEITA

―

Single pulse avalanche energy

(Note 2)

SC-97

2-9F1B

Avalanche current

12.5

TOSHIBA

Repetitive avalanche energy (Note 3)

Channel temperature

°C

Weight: 0.74 g (typ.)

150

Storage temperature range

−55 to 150

stg

Note: Using continuously under heavy loads (e.g. the application of high temperature/current/voltage and the significant change in

temperature, etc.) may cause this product to decrease in the reliability significantly even if the operating conditions (i.e.

operating temperature/current/voltage, etc.) are within the absolute maximum ratings. Please design the appropriate

reliability upon reviewing the Toshiba Semiconductor Reliability Handbook (“Handling Precautions”/Derating Concept and

Methods) and individual reliability data (i.e. reliability test report and estimated failure rate, etc).

Thermal Characteristics

Circuit Configuration

Characteristics

Symbol

Max

1.00

Unit

Notice:

Thermal resistance, channel to case

°C/W

Please use the S1 pin for gate

input signal return. Make

sure that the main current

flows into the S2 pin.

th (ch-c)

Note 1: Ensure that the channel temperature does not exceed 150°C.

Note 2: = 25 V, T = 25°C (initial), L = 113 μH, R = 25 Ω, I = 75 A

Note 3: Repetitive rating: pulse width limited by maximum channel

temperature

This transistor is an electrostatic-sensitive device. Please handle with caution.

2006-11-17

12 3 4 5 6

中文翻译

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与2SK3441_06相关器件

型号	品牌	获取价格	描述	数据表
2SK3441_09	TOSHIBA	获取价格	DC-DC Converter Applications
2SK3442	TOSHIBA	获取价格	TOSHIBA Field Effect Transistor Silicon N Channel MOS Type (U-MOSII)
2SK3442_06	TOSHIBA	获取价格	Silicon N Channel MOS Type Switching Regulator, DC-DC Converter and Motor Drive Applicatio
2SK3443	TOSHIBA	获取价格	SWITCHING REGULATOR DC-DC CONVERTER AND MOTOR DRIVE APPLICATIONS
2SK3443_06	TOSHIBA	获取价格	Silicon N Channel MOS Type Switching Regulator, DC-DC Converter and Motor Drive Applicatio
2SK3443_09	TOSHIBA	获取价格	Switching Regulator, DC-DC Converter and
2SK3444	TOSHIBA	获取价格	Switching Regulator, DC-DC Converter Applications Motor Drive Applications
2SK3444(TE24L,Q)	TOSHIBA	获取价格	MOSFET N-CH 200V 25A SC-97
2SK3444_06	TOSHIBA	获取价格	Silicon N Channel MOS Type Switching Regulator, DC-DC Converter Applications
2SK3444_09	TOSHIBA	获取价格	Switching Regulator, DC-DC Converter Applications

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