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2SK3444_09

更新时间： 2024-10-14 07:32:31
品牌 Logo 应用领域
东芝 - TOSHIBA 转换器稳压器开关
页数 文件大小 规格书
6页 194K
描述
Switching Regulator, DC-DC Converter Applications

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中文翻译

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2SK3444_09 数据手册

 浏览型号2SK3444_09的Datasheet PDF文件第2页浏览型号2SK3444_09的Datasheet PDF文件第3页浏览型号2SK3444_09的Datasheet PDF文件第4页浏览型号2SK3444_09的Datasheet PDF文件第5页浏览型号2SK3444_09的Datasheet PDF文件第6页 
2SK3444  
TOSHIBA Field Effect Transistor Silicon N Channel MOS Type (π-MOSV)  
2SK3444  
Switching Regulator, DC-DC Converter Applications  
Unit: mm  
Motor Drive Applications  
•
•
•
•
Low drain-source ON resistance: R  
= 65 mΩ (typ.)  
DS (ON)  
High forward transfer admittance: |Y | = 10 S (typ.)  
fs  
Low leakage current: I  
= 100 μA (V  
= 200 V)  
DSS  
DS  
Enhancement mode: V = 3.0 to 5.0 V (V  
= 10 V, I = 1 mA)  
th  
DS  
D
Absolute Maximum Ratings (Ta = 25°C)  
Characteristics  
Drain-source voltage  
Symbol  
Rating  
Unit  
V
200  
200  
±30  
25  
V
V
V
DSS  
Drain-gate voltage (R  
Gate-source voltage  
= 20 kΩ)  
V
GS  
DGR  
V
GSS  
DC (Note 1)  
Pulse (Note 1)  
I
D
Drain current  
A
I
100  
125  
DP  
JEDEC  
JEITA  
―
Drain power dissipation (Tc = 25°C)  
P
W
D
AS  
AR  
SC-97  
2-9F1B  
Single pulse avalanche energy  
E
488  
mJ  
(Note 2)  
TOSHIBA  
Avalanche current  
I
25  
12.5  
A
Weight: 0.74 g (typ.)  
Repetitive avalanche energy (Note 3)  
Channel temperature  
E
mJ  
°C  
°C  
AR  
T
150  
ch  
Storage temperature range  
T
−55 to 150  
stg  
Note: Using continuously under heavy loads (e.g. the application of high temperature/current/voltage and the significant change in  
temperature, etc.) may cause this product to decrease in the reliability significantly even if the operating conditions (i.e.  
operating temperature/current/voltage, etc.) are within the absolute maximum ratings. Please design the appropriate  
reliability upon reviewing the Toshiba Semiconductor Reliability Handbook (“Handling Precautions”/Derating Concept and  
Methods) and individual reliability data (i.e. reliability test report and estimated failure rate, etc).  
Thermal Characteristics  
Notice:  
Please use the S1 pin for gate input  
signal return. Make sure that the  
main current flows into the S2 pin.  
Characteristics  
Symbol  
Max  
1.00  
Unit  
Thermal resistance, channel to case  
R
°C/W  
th (ch-c)  
Note 1: Ensure that the channel temperature does not exceed 150°C.  
Note 2: = 50 V, T = 25°C (initial), L = 1.26 mH, I = 25 A, R = 25 Ω  
4
V
DD  
ch  
AR  
G
Note 3: Repetitive rating: pulse width limited by maximum channel temperature  
This transistor is an electrostatic-sensitive device. Please handle with caution.  
1
2
3
1
2009-09-29  
123456

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