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2SK3444_06 PDF预览

2SK3444_06

更新时间: 2024-11-18 04:26:31
品牌 Logo 应用领域
东芝 - TOSHIBA 转换器稳压器开关
页数 文件大小 规格书
6页 188K
描述
Silicon N Channel MOS Type Switching Regulator, DC-DC Converter Applications

2SK3444_06 数据手册

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2SK3444  
TOSHIBA Field Effect Transistor Silicon N Channel MOS Type (π-MOSV)  
2SK3444  
Switching Regulator, DC-DC Converter Applications  
Unit: mm  
Motor Drive Applications  
Low drain-source ON resistance: R  
= 65 m(typ.)  
DS (ON)  
High forward transfer admittance: |Y | = 10 S (typ.)  
fs  
Low leakage current: I  
= 100 μA (V  
= 200 V)  
DSS  
DS  
Enhancement mode: V = 3.0 to 5.0 V (V  
= 10 V, I = 1 mA)  
th  
DS  
D
Absolute Maximum Ratings (Ta = 25°C)  
Characteristics  
Drain-source voltage  
Symbol  
Rating  
Unit  
V
200  
200  
±30  
25  
V
V
V
DSS  
Drain-gate voltage (R  
Gate-source voltage  
= 20 kΩ)  
V
GS  
DGR  
V
GSS  
DC (Note 1)  
Pulse (Note 1)  
I
D
Drain current  
A
I
100  
125  
DP  
Drain power dissipation (Tc = 25°C)  
P
W
D
AS  
AR  
JEDEC  
JEITA  
Single pulse avalanche energy  
E
488  
mJ  
(Note 2)  
SC-97  
2-9F1B  
Avalanche current  
I
25  
12.5  
A
TOSHIBA  
Repetitive avalanche energy (Note 3)  
Channel temperature  
E
mJ  
°C  
°C  
AR  
Weight: 0.74 g (typ.)  
T
150  
ch  
Storage temperature range  
T
55 to 150  
stg  
Note: Using continuously under heavy loads (e.g. the application of high temperature/current/voltage and the significant change in  
temperature, etc.) may cause this product to decrease in the reliability significantly even if the operating conditions (i.e.  
operating temperature/current/voltage, etc.) are within the absolute maximum ratings. Please design the appropriate  
reliability upon reviewing the Toshiba Semiconductor Reliability Handbook (“Handling Precautions”/Derating Concept and  
Methods) and individual reliability data (i.e. reliability test report and estimated failure rate, etc).  
Thermal Characteristics  
Notice:  
Please use the S1 pin for gate input  
signal return. Make sure that the  
main current flows into the S2 pin.  
Characteristics  
Symbol  
Max  
1.00  
Unit  
Thermal resistance, channel to case  
R
°C/W  
th (ch-c)  
Note 1: Ensure that the channel temperature does not exceed 150°C.  
Note 2: = 50 V, T = 25°C (initial), L = 1.26 mH, I = 25 A, R = 25 Ω  
4
V
DD  
ch  
AR  
G
Note 3: Repetitive rating: pulse width limited by maximum channel temperature  
This transistor is an electrostatic-sensitive device. Please handle with caution.  
1
2
3
1
2006-11-21  

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