2SK3444
TOSHIBA Field Effect Transistor Silicon N Channel MOS Type (π-MOSV)
2SK3444
Switching Regulator, DC-DC Converter Applications
Unit: mm
Motor Drive Applications
•
•
•
•
Low drain-source ON resistance: R
= 65 mΩ (typ.)
DS (ON)
High forward transfer admittance: |Y | = 10 S (typ.)
fs
Low leakage current: I
= 100 μA (V
= 200 V)
DSS
DS
Enhancement mode: V = 3.0 to 5.0 V (V
= 10 V, I = 1 mA)
th
DS
D
Absolute Maximum Ratings (Ta = 25°C)
Characteristics
Drain-source voltage
Symbol
Rating
Unit
V
200
200
±30
25
V
V
V
DSS
Drain-gate voltage (R
Gate-source voltage
= 20 kΩ)
V
GS
DGR
V
GSS
DC (Note 1)
Pulse (Note 1)
I
D
Drain current
A
I
100
125
DP
Drain power dissipation (Tc = 25°C)
P
W
D
AS
AR
JEDEC
JEITA
―
Single pulse avalanche energy
E
488
mJ
(Note 2)
SC-97
2-9F1B
Avalanche current
I
25
12.5
A
TOSHIBA
Repetitive avalanche energy (Note 3)
Channel temperature
E
mJ
°C
°C
AR
Weight: 0.74 g (typ.)
T
150
ch
Storage temperature range
T
−55 to 150
stg
Note: Using continuously under heavy loads (e.g. the application of high temperature/current/voltage and the significant change in
temperature, etc.) may cause this product to decrease in the reliability significantly even if the operating conditions (i.e.
operating temperature/current/voltage, etc.) are within the absolute maximum ratings. Please design the appropriate
reliability upon reviewing the Toshiba Semiconductor Reliability Handbook (“Handling Precautions”/Derating Concept and
Methods) and individual reliability data (i.e. reliability test report and estimated failure rate, etc).
Thermal Characteristics
Notice:
Please use the S1 pin for gate input
signal return. Make sure that the
main current flows into the S2 pin.
Characteristics
Symbol
Max
1.00
Unit
Thermal resistance, channel to case
R
°C/W
th (ch-c)
Note 1: Ensure that the channel temperature does not exceed 150°C.
Note 2: = 50 V, T = 25°C (initial), L = 1.26 mH, I = 25 A, R = 25 Ω
4
V
DD
ch
AR
G
Note 3: Repetitive rating: pulse width limited by maximum channel temperature
This transistor is an electrostatic-sensitive device. Please handle with caution.
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2006-11-21