是否Rohs认证: | 不符合 | 生命周期: | Obsolete |
包装说明: | FLANGE MOUNT, R-PSFM-T3 | 针数: | 3 |
Reach Compliance Code: | unknown | 风险等级: | 5.88 |
雪崩能效等级(Eas): | 420 mJ | 配置: | SINGLE WITH BUILT-IN DIODE |
最小漏源击穿电压: | 700 V | 最大漏极电流 (Abs) (ID): | 10 A |
最大漏极电流 (ID): | 10 A | 最大漏源导通电阻: | 1 Ω |
FET 技术: | METAL-OXIDE SEMICONDUCTOR | JESD-30 代码: | R-PSFM-T3 |
元件数量: | 1 | 端子数量: | 3 |
工作模式: | ENHANCEMENT MODE | 最高工作温度: | 150 °C |
封装主体材料: | PLASTIC/EPOXY | 封装形状: | RECTANGULAR |
封装形式: | FLANGE MOUNT | 峰值回流温度(摄氏度): | NOT SPECIFIED |
极性/信道类型: | N-CHANNEL | 最大功率耗散 (Abs): | 80 W |
最大脉冲漏极电流 (IDM): | 30 A | 认证状态: | Not Qualified |
子类别: | FET General Purpose Power | 表面贴装: | NO |
端子形式: | THROUGH-HOLE | 端子位置: | SINGLE |
处于峰值回流温度下的最长时间: | NOT SPECIFIED | 晶体管应用: | SWITCHING |
晶体管元件材料: | SILICON | Base Number Matches: | 1 |
型号 | 品牌 | 获取价格 | 描述 | 数据表 |
2SK3453(F) | TOSHIBA |
获取价格 |
TRANSISTOR,MOSFET,N-CHANNEL,700V V(BR)DSS,10A I(D),TO-247VAR | |
2SK3453_06 | TOSHIBA |
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Silicon N Channel MOS Type Switching Regulator Applications | |
2SK3453_09 | TOSHIBA |
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Switching Regulator Applications | |
2SK3454 | NEC |
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SWITCHING N-CHANNEL POWER MOSFET INDUSTRIAL USE | |
2SK3455 | NEC |
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SWITCHING N-CHANNEL POWER MOSFET | |
2SK3455-AZ | NEC |
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Power Field-Effect Transistor, 12A I(D), 500V, 0.6ohm, 1-Element, N-Channel, Silicon, Meta | |
2SK3456 | KEXIN |
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MOS Field Effect Transistor | |
2SK3456 | TYSEMI |
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Low gate charge QG = 30 nC TYP. (VDD = 400 V, VGS = 10 V, ID = 12 A) | |
2SK3456 | NEC |
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SWITCHING N-CHANNEL POWER MOSFET | |
2SK3456 | RENESAS |
获取价格 |
12A, 500V, 0.6ohm, N-CHANNEL, Si, POWER, MOSFET, TO-220AB, MP-25, 3 PIN |