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2SK3442_06

更新时间: 2024-10-14 04:26:31
品牌 Logo 应用领域
东芝 - TOSHIBA 转换器稳压器开关电机驱动DC-DC转换器
页数 文件大小 规格书
6页 167K
描述
Silicon N Channel MOS Type Switching Regulator, DC-DC Converter and Motor Drive Applications

2SK3442_06 数据手册

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2SK3442  
TOSHIBA Field Effect Transistor Silicon N Channel MOS Type (U-MOSII)  
2SK3442  
Switching Regulator, DC-DC Converter and  
Motor Drive Applications  
Unit: mm  
Low drain-source ON resistance: R  
High forward transfer admittance: Y = 28 S (typ.)  
= 15 m(typ.)  
DS (ON)  
fs  
Low leakage current: I  
= 100 μA (V  
= 100 V)  
DSS  
DS  
Enhancement mode: V = 2.0~4.0 V (V  
= 10 V, I = 1 mA)  
D
th  
DS  
Absolute Maximum Ratings (Ta = 25°C)  
Characteristics  
Drain-source voltage  
Symbol  
Rating  
Unit  
V
100  
100  
±30  
45  
V
V
V
DSS  
Drain-gate voltage (R  
Gate-source voltage  
= 20 kΩ)  
V
GS  
DGR  
V
GSS  
DC (Note 1)  
Pulse (Note 1)  
I
D
Drain current  
A
I
180  
125  
DP  
Drain power dissipation (Tc = 25°C)  
P
W
D
AS  
AR  
Single pulse avalanche energy  
(Note 2)  
E
468  
mJ  
JEDEC  
JEITA  
SC-97  
2-9F1B  
Avalanche current  
I
45  
12.5  
A
Repetitive avalanche energy (Note 3)  
Channel temperature  
E
mJ  
°C  
°C  
TOSHIBA  
AR  
T
ch  
150  
Weight: 0.74 g (typ.)  
Storage temperature range  
T
stg  
55~150  
Note: Using continuously under heavy loads (e.g. the application of high temperature/current/voltage and the significant change in  
temperature, etc.) may cause this product to decrease in the reliability significantly even if the operating conditions (i.e.  
operating temperature/current/voltage, etc.) are within the absolute maximum ratings. Please design the appropriate  
reliability upon reviewing the Toshiba Semiconductor Reliability Handbook (“Handling Precautions”/Derating Concept and  
Methods) and individual reliability data (i.e. reliability test report and estimated failure rate, etc).  
Thermal Characteristics  
Notice:  
Please use the S1 pin for gate input  
signal return. Make sure that the  
main current flows into the S2 pin.  
Characteristics  
Symbol  
Max  
1.00  
Unit  
Thermal resistance, channel to case  
R
°C/W  
th (ch-c)  
Note 1: Ensure that the channel temperature does not exceed 150°C.  
Note 2 = 25 V, T = 25°C (initial), L = 373 μH, R = 25 Ω, I  
4
V
DD  
= 45 A  
AR  
ch  
G
Note 3: Repetitive rating: pulse width limited by maximum channel temperature  
This transistor is an electrostatic-sensitive device. Please handle with caution.  
1
2
3
1
2006-11-20  

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