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2SK3443_06

更新时间： 2024-11-18 04:26:31
品牌 Logo 应用领域
东芝 - TOSHIBA 转换器稳压器开关电机驱动DC-DC转换器
页数 文件大小 规格书
6页 170K
描述
Silicon N Channel MOS Type Switching Regulator, DC-DC Converter and Motor Drive Applications

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2SK3443_06 数据手册

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2SK3443  
TOSHIBA Field Effect Transistor Silicon N Channel MOS Type (π-MOSV)  
2SK3443  
Switching Regulator, DC-DC Converter and  
Motor Drive Applications  
Unit: mm  
•
•
•
•
Low drain-source ON resistance: R  
High forward transfer admittance: ⎪Y ⎪ = 9 S (typ.)  
= 50 mΩ (typ.)  
DS (ON)  
fs  
Low leakage current: I  
= 100 μA (V  
= 150 V)  
DSS  
DS  
Enhancementmode: V = 3.0 to 5.0 V (V  
= 10 V, I = 1 mA)  
D
th  
DS  
Absolute Maximum Ratings (Ta = 25°C)  
Characteristics  
Drain-source voltage  
Symbol  
Rating  
Unit  
V
150  
150  
±30  
30  
V
V
V
DSS  
Drain-gate voltage (R  
Gate-source voltage  
= 20 kΩ)  
V
GS  
DGR  
V
GSS  
DC (Note 1)  
Pulse (Note 1)  
I
D
Drain current  
A
I
120  
125  
DP  
Drain power dissipation (Tc = 25°C)  
P
W
D
AS  
AR  
Single pulse avalanche energy  
JEDEC  
JEITA  
―
E
468  
mJ  
(Note 2)  
SC-97  
2-9F1B  
Avalanche current  
I
30  
12.5  
A
TOSHIBA  
Repetitive avalanche energy (Note 3)  
Channel temperature  
E
mJ  
°C  
°C  
AR  
T
ch  
150  
Weight: 0.74 g (typ.)  
Storage temperature range  
T
stg  
−55 to 150  
Note: Using continuously under heavy loads (e.g. the application of high temperature/current/voltage and the significant change in  
temperature, etc.) may cause this product to decrease in the reliability significantly even if the operating conditions (i.e.  
operating temperature/current/voltage, etc.) are within the absolute maximum ratings. Please design the appropriate  
reliability upon reviewing the Toshiba Semiconductor Reliability Handbook (“Handling Precautions”/Derating Concept and  
Methods) and individual reliability data (i.e. reliability test report and estimated failure rate, etc).  
Thermal Characteristics  
Circuit Configuration  
Characteristics  
Symbol  
Max  
1.00  
Unit  
Notice:  
Please use the S1 pin for gate  
input signal return. Make  
sure that the main current  
flows into the S2 pin.  
Thermal resistance, channel to case  
R
°C/W  
th (ch-c)  
Note 1: Ensure that the channel temperature does not exceed 150°C.  
Note 2 = 50 V, T = 25°C (initial), L = 773 μH, R = 25 Ω, I = 30 A  
V
DD  
ch  
G
AR  
Note 3: Repetitive rating: pulse width limited by maximum channel  
temperature  
4
This transistor is an electrostatic-sensitive device. Please handle with  
caution.  
1
2
3
1
2006-11-20  
123456

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