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2SK3444 PDF预览

2SK3444

更新时间: 2024-11-17 22:52:59
品牌 Logo 应用领域
东芝 - TOSHIBA 转换器稳压器开关电机驱动
页数 文件大小 规格书
6页 203K
描述
Switching Regulator, DC-DC Converter Applications Motor Drive Applications

2SK3444 技术参数

是否无铅: 含铅是否Rohs认证: 不符合
生命周期:End Of Life零件包装代码:SC-97
包装说明:SMALL OUTLINE, R-PDSO-F4针数:4
Reach Compliance Code:unknownECCN代码:EAR99
风险等级:5.33雪崩能效等级(Eas):488 mJ
外壳连接:DRAIN配置:SINGLE WITH BUILT-IN DIODE
最小漏源击穿电压:200 V最大漏极电流 (Abs) (ID):25 A
最大漏极电流 (ID):25 A最大漏源导通电阻:0.082 Ω
FET 技术:METAL-OXIDE SEMICONDUCTORJESD-30 代码:R-PDSO-F4
JESD-609代码:e0元件数量:1
端子数量:4工作模式:ENHANCEMENT MODE
最高工作温度:150 °C封装主体材料:PLASTIC/EPOXY
封装形状:RECTANGULAR封装形式:SMALL OUTLINE
峰值回流温度(摄氏度):NOT SPECIFIED极性/信道类型:N-CHANNEL
最大功率耗散 (Abs):125 W最大脉冲漏极电流 (IDM):100 A
认证状态:Not Qualified子类别:FET General Purpose Power
表面贴装:YES端子面层:Tin/Lead (Sn/Pb)
端子形式:FLAT端子位置:DUAL
处于峰值回流温度下的最长时间:NOT SPECIFIED晶体管应用:SWITCHING
晶体管元件材料:SILICONBase Number Matches:1

2SK3444 数据手册

 浏览型号2SK3444的Datasheet PDF文件第2页浏览型号2SK3444的Datasheet PDF文件第3页浏览型号2SK3444的Datasheet PDF文件第4页浏览型号2SK3444的Datasheet PDF文件第5页浏览型号2SK3444的Datasheet PDF文件第6页 
2SK3444  
TOSHIBA Field Effect Transistor Silicon N Channel MOS Type (π-MOSV)  
2SK3444  
Switching Regulator, DC-DC Converter Applications  
Unit: mm  
Motor Drive Applications  
Low drain-source ON resistance: R  
= 65 m(typ.)  
DS (ON)  
High forward transfer admittance: |Y | = 10 S (typ.)  
fs  
= 100 µA (V  
Low leakage current: I  
= 200 V)  
DS  
DSS  
Enhancement mode: V = 3.0 to 5.0 V (V  
= 10 V, I = 1 mA)  
th DS  
D
Maximum Ratings  
=
(Ta 25°C)  
Characteristics  
Drain-source voltage  
Symbol  
Rating  
Unit  
V
200  
200  
±30  
25  
V
V
V
DSS  
Drain-gate voltage (R  
= 20 k)  
V
DGR  
GS  
Gate-source voltage  
V
GSS  
DC (Note 1)  
Pulse (Note 1)  
I
D
Drain current  
A
I
100  
125  
DP  
Drain power dissipation (Tc = 25°C)  
P
W
D
AS  
AR  
JEDEC  
JEITA  
Single pulse avalanche energy  
E
488  
mJ  
(Note 2)  
SC-97  
2-9F1B  
Avalanche current  
I
25  
12.5  
A
TOSHIBA  
Repetitive avalanche energy (Note 3)  
Channel temperature  
E
mJ  
°C  
°C  
AR  
Weight: 0.74 g (typ.)  
T
ch  
150  
Storage temperature range  
T
stg  
55 to 150  
Thermal Characteristics  
Notice:  
Characteristics  
Symbol  
Max  
1.00  
Unit  
Please use the S1 pin for gate input  
signal return. Make sure that the  
main current flows into the S2 pin.  
Thermal resistance, channel to case  
R
°C/W  
th (ch-c)  
Note 1: Ensure that the channel temperature does not exceed 150°C.  
Note 2: = 50 V, T = 25°C (initial), L = 1.26 mH, I = 25 A, R = 25 Ω  
4
V
DD  
ch  
AR  
G
Note 3: Repetitive rating: pulse width limited by maximum channel temperature  
This transistor is an electrostatic-sensitive device. Please handle with caution.  
1
2
Marking  
3
Part No. (or abbreviation code)  
Lot No.  
K3444  
A line indicates  
lead (Pb)-free package or  
lead (Pb)-free finish.  
1
2004-07-06  

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