Datasheet > 2SK3439_06

2SK3439_06

更新时间： 2024-11-18 04:26:31

品牌	Logo	应用领域
东芝 - TOSHIBA		转换器
页数	文件大小	规格书
6页	184K
描述
Silicon N Channel MOS Type DC-DC Converter Applications

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2SK3439_06 数据手册

2SK3439

TOSHIBA Field Effect Transistor Silicon N Channel MOS Type (U-MOSII)

2SK3439

DC-DC Converter Applications

Unit: mm

Relay Drive and Motor Drive Applications

•

Low drain-source ON resistance: R

= 3.8 mΩ (typ.)

DS (ON)

High forward transfer admittance: |Y | = 70 S (typ.)

Low leakage current: I

= 100 µA (max) (V

= 30 V)

DSS

Enhancement mode: V = 1.3 to 2.5 V (V

= 10 V, I = 1 mA)

Absolute Maximum Ratings (Ta = 25°C)

Characteristics

Drain-source voltage

Symbol

Rating

Unit

DSS

Drain-gate voltage (R

Gate-source voltage

= 20 kΩ)

DGR

±20

GSS

(Note 1)

Drain current

Pulse (t 1 ms)

300

125

731

(Note 1)

Drain power dissipation (Tc = 25°C)

JEDEC

JEITA

―

Single pulse avalanche energy

(Note 2)

SC-97

2-9F1B

Avalanche current

12.5

TOSHIBA

Repetitive avalanche energy (Note 3)

Channel temperature

°C

Weight: 0.74 g (typ.)

150

Storage temperature range

−55 to 150

stg

Note: Using continuously under heavy loads (e.g. the application of high temperature/current/voltage and the significant change in

temperature, etc.) may cause this product to decrease in the reliability significantly even if the operating conditions (i.e.

operating temperature/current/voltage, etc.) are within the absolute maximum ratings. Please design the appropriate

reliability upon reviewing the Toshiba Semiconductor Reliability Handbook (“Handling Precautions”/Derating Concept and

Methods) and individual reliability data (i.e. reliability test report and estimated failure rate, etc).

Thermal Characteristics

Notice:

Characteristics

Symbol

Max

1.00

Unit

Please use the S1 pin for gate

input signal return. Make

sure that the main current

flows into the S2 pin.

Thermal resistance, channel to case

°C/W

th (ch-c)

Note 1: Ensure that the channel temperature does not exceed 150°C.

Note 2: = 24 V, T = 25°C (initial), L = 100 μH, R = 25 Ω, I

= 75 A

Note 3: Repetitive rating: pulse width limited by maximum channel temperature.

This transistor is an electrostatic-sensitive device. Please handle with caution.

2006-11-16

12 3 4 5 6

中文翻译

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与2SK3439_06相关器件

型号	品牌	获取价格	描述	数据表
2SK3439_09	TOSHIBA	获取价格	DC-DC Converter Applications
2SK3440	TOSHIBA	获取价格	Switching Regulator, DC-DC Converter Applications Motor Drive Applications
2SK3440_06	TOSHIBA	获取价格	Silicon N Channel MOS Type Switching Regulator, DC-DC Converter Applications
2SK3440_09	TOSHIBA	获取价格	Switching Regulator, DC-DC Converter Applications
2SK3441	TOSHIBA	获取价格	TOSHIBA Field Effect Transistor Silicon N Channel MOS Type (U-MOSII)
2SK3441_06	TOSHIBA	获取价格	Silicon N Channel MOS Type DC-DC Converter Applications
2SK3441_09	TOSHIBA	获取价格	DC-DC Converter Applications
2SK3442	TOSHIBA	获取价格	TOSHIBA Field Effect Transistor Silicon N Channel MOS Type (U-MOSII)
2SK3442_06	TOSHIBA	获取价格	Silicon N Channel MOS Type Switching Regulator, DC-DC Converter and Motor Drive Applicatio
2SK3443	TOSHIBA	获取价格	SWITCHING REGULATOR DC-DC CONVERTER AND MOTOR DRIVE APPLICATIONS

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