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2SK3438_10

更新时间： 2024-11-18 07:32:31
品牌 Logo 应用领域
东芝 - TOSHIBA 驱动器转换器继电器电机DC-DC转换器
页数 文件大小 规格书
6页 197K
描述
DC-DC Converter, Relay Drive and Motor Drive

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中文翻译

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2SK3438_10 数据手册

 浏览型号2SK3438_10的Datasheet PDF文件第2页浏览型号2SK3438_10的Datasheet PDF文件第3页浏览型号2SK3438_10的Datasheet PDF文件第4页浏览型号2SK3438_10的Datasheet PDF文件第5页浏览型号2SK3438_10的Datasheet PDF文件第6页 
2SK3438  
TOSHIBA Field Effect Transistor Silicon N-Channel MOS Type (π-MOSV)  
2SK3438  
DC-DC Converter, Relay Drive and Motor Drive  
Applications  
Unit: mm  
•
•
•
•
Low drain-source ON-resistance: R  
= 0.74 Ω (typ.)  
DS (ON)  
High forward transfer admittance: |Y | = 4.5 S (typ.)  
fs  
Low leakage current: I  
= 100 μA (max) (V  
= 600 V)  
DSS  
DS  
Enhancement mode: V = 3.0 to 5.0 V (V  
= 10 V, I = 1 mA)  
D
th  
DS  
Absolute Maximum Ratings (Ta = 25°C)  
Characteristics  
Drain-source voltage  
Symbol  
Rating  
Unit  
V
600  
600  
±30  
10  
V
V
V
DSS  
Drain-gate voltage (R  
Gate-source voltage  
= 20 kΩ)  
V
GS  
DGR  
V
GSS  
DC (Note 1)  
I
D
Drain current  
A
Pulse  
I
30  
80  
DP  
(Note 1)  
JEDEC  
JEITA  
―
―
Drain power dissipation (Tc = 25°C)  
P
W
D
AS  
AR  
Single pulse avalanche energy  
E
252  
mJ  
TOSHIBA  
2-9F1C  
(Note 2)  
Avalanche current  
I
10  
8
A
Weight: 0.74 g (typ.)  
Repetitive avalanche energy (Note 3)  
Channel temperature  
E
mJ  
°C  
°C  
AR  
T
150  
ch  
Storage temperature range  
T
−55 to 150  
stg  
Note: Using continuously under heavy loads (e.g. the application of high temperature/current/voltage and the significant change in  
temperature, etc.) may cause this product to decrease in the reliability significantly even if the operating conditions (i.e.  
operating temperature/current/voltage, etc.) are within the absolute maximum ratings. Please design the appropriate  
reliability upon reviewing the Toshiba Semiconductor Reliability Handbook (“Handling Precautions”/“Derating Concept and  
Methods“) and individual reliability data (i.e. reliability test report and estimated failure rate, etc).  
Thermal Characteristics  
4
Characteristics  
Symbol  
Max  
1.56  
Unit  
Thermal resistance, channel to case  
R
°C/W  
1
th (ch-c)  
Note 1: Ensure that the channel temperature does not exceed 150°C.  
Note 2: = 90 V, T = 25°C (initial), L = 4.41 mH, R = 25Ω, I = 10 A  
V
DD  
ch  
G
AR  
3
Note 3: Repetitive rating: pulse width limited by maximum channel temperature  
This transistor is an electrostatic-sensitive device. Handle with care.  
1
2010-01-29  
123456

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