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2SK3437(TE24L,Q)

更新时间： 2024-11-19 09:39:31
品牌 Logo 应用领域
东芝 - TOSHIBA /
页数 文件大小 规格书
6页 209K
描述
2SK3437(TE24L,Q)

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2SK3437(TE24L,Q) 技术参数

生命周期：Obsolete包装说明：,
Reach Compliance Code：unknown风险等级：5.84

2SK3437(TE24L,Q) 数据手册

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2SK3437  
TOSHIBA Field Effect Transistor Silicon N-Channel MOS Type (π-MOSV)  
2SK3437  
DC-DC Converter, Relay Drive and Motor Drive  
Applications  
Unit: mm  
•
•
•
•
Low drain-source ON-resistance: R  
= 0.74 Ω (typ.)  
DS (ON)  
High forward transfer admittance: |Y | = 4.5 S (typ.)  
fs  
Low leakage current: I  
= 100 μA (max) (V  
= 600 V)  
DSS  
DS  
Enhancement mode: V = 3.0 to 5.0 V (V  
= 10 V, I = 1 mA)  
D
th  
DS  
Absolute Maximum Ratings (Ta = 25°C)  
Characteristics  
Drain-source voltage  
Symbol  
Rating  
Unit  
V
600  
600  
±30  
10  
V
V
V
DSS  
Drain-gate voltage (R  
Gate-source voltage  
= 20 kΩ)  
V
GS  
DGR  
V
GSS  
DC (Note 1)  
I
D
Drain current  
A
Pulse  
I
30  
80  
DP  
(Note 1)  
JEDEC  
JEITA  
―
―
Drain power dissipation (Tc = 25°C)  
P
W
D
AS  
AR  
Single pulse avalanche energy  
E
252  
mJ  
(Note 2)  
TOSHIBA  
2-10S1B  
Avalanche current  
I
10  
8
A
Weight: 1.5 g (typ.)  
Repetitive avalanche energy (Note 3)  
Channel temperature  
E
mJ  
°C  
°C  
AR  
T
150  
ch  
Storage temperature range  
T
−55 to 150  
stg  
Note: Using continuously under heavy loads (e.g. the application of high  
temperature/current/voltage and the significant change in temperature,  
etc.) may cause this product to decrease in the reliability significantly even  
if the operating conditions (i.e. operating temperature/current/voltage,  
etc.) are within the absolute maximum ratings. Please design the  
appropriate reliability upon reviewing the Toshiba Semiconductor  
Reliability Handbook (“Handling Precautions”/“Derating Concept and  
Methods”) and individual reliability data (i.e. reliability test report and  
estimated failure rate, etc).  
Thermal Characteristics  
Characteristics  
Symbol  
Max  
Unit  
Thermal resistance, channel to case  
Thermal resistance, channel to ambient  
R
1.56  
83.3  
°C/W  
°C/W  
th (ch-c)  
JEDEC  
JEITA  
―
―
R
th (ch-a)  
Note 1: Ensure that the channel temperature does not exceed 150°C.  
Note 2: = 90 V, T = 25°C (initial), L = 4.41 mH, R = 25 Ω,  
TOSHIBA  
2-10S2B  
V
DD  
ch  
G
I
= 10 A  
AR  
Weight: 1.5 g (typ.)  
Note 3: Repetitive rating: Pulse width limited by maximum channel  
temperature  
This transistor is an electrostatic-sensitive device. Please handle with caution.  
1
2010-01-29  
123456

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