2SK3437(SM)

更新时间： 2024-11-18 13:04:27

品牌	Logo	应用领域
东芝 - TOSHIBA		晶体驱动器转换器继电器晶体管功率场效应晶体管电机 DC-DC转换器
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中文翻译

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数据手册

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2SK3437(SM) 数据手册

2SK3437

TOSHIBA Field Effect Transistor Silicon N Channel MOS Type (π-MOSV)

2SK3437

DC-DC Converter, Relay Drive and Motor Drive

Applications

Unit: mm

•

Low drain-source ON resistance: R

= 0.74 Ω (typ.)

DS (ON)

High forward transfer admittance: |Y | = 4.5 S (typ.)

Low leakage current: I

= 100 µA (max) (V

= 600 V)

DSS

Enhancement mode: V = 3.0~5.0 V (V

= 10 V, I = 1 mA)

Maximum Ratings

(Ta 25°C)

Characteristics

Drain-source voltage

Symbol

Rating

Unit

600

±30

DSS

Drain-gate voltage (R

= 20 kΩ)

DGR

Gate-source voltage

GSS

DC (Note 1)

Drain current

Pulse

(Note 1)

Drain power dissipation (Tc = 25°C)

JEDEC

JEITA

―

Single pulse avalanche energy

252

(Note 2)

Avalanche current

TOSHIBA

2-10S1B

Repetitive avalanche energy (Note 3)

Channel temperature

°C

Weight: 1.5 g (typ.)

150

Storage temperature range

−55~150

stg

Thermal Characteristics

Characteristics

Symbol

Max

Unit

Thermal resistance, channel to case

Thermal resistance, channel to ambient

1.56

83.3

°C/W

th (ch-c)

th (ch-a)

Note 1: Ensure that the channel temperature does not exceed 150°C.

Note 2:

= 90 V, T = 25°C (initial), L = 4.41 mH, R = 25 Ω,

= 10 A

Note 3: Repetitive rating: Pulse width limited by maximum channel

temperature

This transistor is an electrostatic-sensitive device. Please handle with

caution.

JEDEC

JEITA

―

TOSHIBA

2-10S2B

Weight: 1.5 g (typ.)

2004-07-06

12 3 4 5 6

中文翻译

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