生命周期: | Obsolete | 包装说明: | SMALL OUTLINE, R-PDSO-G3 |
针数: | 3 | Reach Compliance Code: | unknown |
ECCN代码: | EAR99 | HTS代码: | 8541.21.00.95 |
风险等级: | 5.84 | Is Samacsys: | N |
配置: | SINGLE WITH BUILT-IN DIODE | 最小漏源击穿电压: | 450 V |
最大漏极电流 (Abs) (ID): | 0.03 A | 最大漏极电流 (ID): | 0.03 A |
最大漏源导通电阻: | 300 Ω | FET 技术: | METAL-OXIDE SEMICONDUCTOR |
JESD-30 代码: | R-PDSO-G3 | 元件数量: | 1 |
端子数量: | 3 | 工作模式: | ENHANCEMENT MODE |
封装主体材料: | PLASTIC/EPOXY | 封装形状: | RECTANGULAR |
封装形式: | SMALL OUTLINE | 极性/信道类型: | N-CHANNEL |
最大功率耗散 (Abs): | 0.25 W | 认证状态: | Not Qualified |
子类别: | FET General Purpose Power | 表面贴装: | YES |
端子形式: | GULL WING | 端子位置: | DUAL |
晶体管应用: | SWITCHING | 晶体管元件材料: | SILICON |
Base Number Matches: | 1 |
型号 | 品牌 | 获取价格 | 描述 | 数据表 |
2SK3074 | TOSHIBA |
获取价格 |
N CHANNEL MOS TYPE (RF POWER MOSFET FOR VHF- AND UHF-BAND POWER AMPLIFIER) | |
2SK3074_07 | TOSHIBA |
获取价格 |
SILICON N CHANNEL MOS TYPE RF POWER MOSFET FOR VHF−AND UHF-BAND POWER AMPLIFIER | |
2SK3075 | TOSHIBA |
获取价格 |
N CHANNEL MOS TYPE (RF POWER MOSFET FOR VHF- AND UHF-BAND POWER AMPLIFIER) | |
2SK3075(TE12L) | TOSHIBA |
获取价格 |
TRANSISTOR,MOSFET,N-CHANNEL,30V V(BR)DSS,5A I(D),RFMOD | |
2SK3075_07 | TOSHIBA |
获取价格 |
SILICON N CHANNEL MOS TYPE RF POWER MOSFET FOR VHF−AND UHF−BAND POWER AMPLIFIE | |
2SK3076 | HITACHI |
获取价格 |
Silicon N Channel MOS FET High Speed Power Switching | |
2SK3076(L) | HITACHI |
获取价格 |
Power Field-Effect Transistor, 0.9ohm, LDPAK-3 | |
2SK3076(S) | HITACHI |
获取价格 |
Power Field-Effect Transistor, 0.9ohm, LDPAK-3 | |
2SK3076L | HITACHI |
获取价格 |
Silicon N Channel MOS FET High Speed Power Switching | |
2SK3076S | HITACHI |
获取价格 |
Silicon N Channel MOS FET High Speed Power Switching |