Datasheet > 2SK3077_07

2SK3077_07

更新时间： 2024-09-14 04:26:31

品牌	Logo	应用领域
东芝 - TOSHIBA		放大器 GSM
页数	文件大小	规格书
4页	151K
描述
SILICON N CHANNEL MOS TYPE 900 MHz BAND AMPLIFIER APPLICATIONS (GSM)

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中文翻译

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数据手册

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2SK3077_07 数据手册

2SK3077

TOSHIBA FIELD EFFECT TRANSISTOR SILICON N CHANNEL MOS TYPE

2SK3077

900 MHz BAND AMPLIFIER APPLICATIONS (GSM)

(Note)The TOSHIBA products listed in this document are intended for

high frequency Power Amplifier of telecommunications equipment. These

TOSHIBA products are neither intended nor warranted for any other use.

Do not use these TOSHIBA products listed in this document except for

high frequency Power Amplifier of telecommunications equipment.

Unit: mm

z Output Power

z Gain

: P = 15.0 dBmW (Min.)

: G = 15.0 dB (Min.)

z Drain Efficiency

: η = 20% (Typ.)

MAXIMUM RATINGS (Ta = 25°C)

CHARACTERISTIC

Drain-Source Voltage

SYMBOL

RATING

UNIT

DSS

Gate-Source Voltage

Drain Current

GSS

0.1

Power Dissipation

250

°C

stg

Channel Temperature

Storage Temperature Range

150

−45~150

JEDEC

JEITA

—

*: Tc = 25°C When mounted on a 1.6 mm glass epoxy PCB

TOSHIBA

2−2K1D

MARKING

2007-2-19

12 3 4

中文翻译

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