Datasheet > 2SK3078A_07

2SK3078A_07

更新时间： 2022-04-23 23:00:11

品牌	Logo	应用领域
东芝 - TOSHIBA		放大器
页数	文件大小	规格书
5页	132K
描述
Silicon N Channel MOS Type VHF/UHF Band Amplifier Applications

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2SK3078A_07 数据手册

2SK3078A

TOSHIBA Field Effect Transistor Silicon N Channel MOS Type

2SK3078A

VHF/UHF Band Amplifier Applications

Unit: mm

(Note)The TOSHIBA products listed in this document are intended for high

frequency Power Amplifier of telecommunications equipment.These

TOSHIBA products are neither intended nor warranted for any other

use.Do not use these TOSHIBA products listed in this document except for

high frequency Power Amplifier of telecommunications equipment.

•

Output power: P ≥ 28.0dBmW

Gain: G ≥ 8.0dB

Drain Efficiency: ηD ≥ 50%

Absolute Maximum Ratings (Ta = 25°C)

Characteristics

Drain-source voltage

Symbol

Rating

Unit

DSS

Gate-source voltage

Drain current

0.5

GSS

Power dissipation

(Note 1)

°C

JEDEC

JEITA

―

Channel temperature

Storage temperature range

150

stg

−45~150

SC-62

2-5K1D

TOSHIBA

Note: Using continuously under heavy loads (e.g. the application of

high temperature/current/voltage and the significant change in

temperature, etc.) may cause this product to decrease in the

Weight: 0.05 g (typ.)

reliability significantly even if the operating conditions (i.e. operating temperature/current/voltage, etc.) are

within the absolute maximum ratings.

Please design the appropriate reliability upon reviewing the Toshiba Semiconductor Reliability Handbook

(“Handling Precautions”/“Derating Concept and Methods”) and individual reliability data (i.e. reliability test

report and estimated failure rate, etc).

Note 1: Tc = 25°C

Marking

Part No. (or abbreviation code)

A line indicates

lead (Pb)-free package or

lead (Pb)-free finish.

Lot No.

1. Gate

2. Source

3. Drain

Caution: This device is sensitive to electrostatic discharge.

Please make enough tool and equipment earthed when you handle.

2007-11-01

12 3 4 5

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