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2SK3085

更新时间: 2024-02-14 18:02:57
品牌 Logo 应用领域
东芝 - TOSHIBA 晶体转换器稳压器晶体管功率场效应晶体管开关脉冲电机驱动DC-DC转换器局域网
页数 文件大小 规格书
6页 208K
描述
Chopper Regulator, DC-DC Converter and Motor Drive Applications

2SK3085 技术参数

是否Rohs认证: 符合生命周期:Active
Reach Compliance Code:unknown风险等级:5.76
配置:Single最大漏极电流 (Abs) (ID):3.5 A
FET 技术:METAL-OXIDE SEMICONDUCTOR工作模式:ENHANCEMENT MODE
最高工作温度:150 °C极性/信道类型:N-CHANNEL
最大功率耗散 (Abs):75 W子类别:FET General Purpose Power
表面贴装:NOBase Number Matches:1

2SK3085 数据手册

 浏览型号2SK3085的Datasheet PDF文件第2页浏览型号2SK3085的Datasheet PDF文件第3页浏览型号2SK3085的Datasheet PDF文件第4页浏览型号2SK3085的Datasheet PDF文件第5页浏览型号2SK3085的Datasheet PDF文件第6页 
                                                        
                                                        
2SK3085  
TOSHIBA Field Effect Transistor Silicon N Channel MOS Type (F-MOSV)  
2SK3085  
Chopper Regulator, DC-DC Converter and Motor Drive  
Unit: mm  
Applications  
·
·
·
·
Low drain-source ON resistance: R  
= 1.7 (typ.)  
DS (ON)  
High forward transfer admittance: |Y | = 3 S (typ.)  
fs  
= 100 µA (max) (V  
Low leakage current: I  
= 600 V)  
DSS  
DS  
= 10 V, I = 1 mA)  
Enhancement-mode: V = 2.0~4.0 V (V  
th DS  
D
Maximum Ratings (Ta = 25°C)  
Characteristics  
Symbol  
Rating  
Unit  
Drain-source voltage  
V
600  
600  
±30  
3.5  
14  
V
V
V
DSS  
DGR  
GSS  
Drain-gate voltage (R  
= 20 kW)  
V
V
GS  
Gate-source voltage  
DC  
(Note 1)  
I
D
Drain current  
A
Pulse (Note 1)  
I
DP  
Drain power dissipation (Tc = 25°C)  
P
75  
W
D
AS  
AR  
Single pulse avalanche energy  
JEDEC  
JEITA  
TO-220AB  
E
227  
mJ  
(Note 2)  
SC-46  
Avalanche current  
I
3.5  
7.5  
A
TOSHIBA  
2-10P1B  
Repetitive avalanche energy (Note 3)  
Channel temperature  
E
mJ  
°C  
°C  
AR  
Weight: 2.0 g (typ.)  
T
150  
ch  
Storage temperature range  
T
-55~150  
stg  
Thermal Characteristics  
Characteristics  
Symbol  
Max  
Unit  
Thermal resistance, channel to case  
Thermal resistance, channel to ambient  
R
R
1.67  
83.3  
°C/W  
°C/W  
th (ch-c)  
th (ch-a)  
Note 1: Please use devices on condition that the channel temperature is below 150°C.  
Note 2: V = 90 V, T = 25°C, L = 28.8 mH, R = 25 W, I = 3.5 A  
DD ch AR  
G
Note 3: Repetitive rating; pulse width limited by maximum channel temperature.  
This transistor is an electrostatic sensitive device. Please handle with caution.  
2002-08-09  
1

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