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2SK3082(S) PDF预览

2SK3082(S)

更新时间: 2024-11-09 13:00:59
品牌 Logo 应用领域
瑞萨 - RENESAS 开关电源开关
页数 文件大小 规格书
9页 94K
描述
0.15ohm, POWER, FET, LDPAK-3

2SK3082(S) 技术参数

生命周期:Transferred零件包装代码:TO-252
包装说明:SMALL OUTLINE, R-PSSO-G2针数:3
Reach Compliance Code:unknown风险等级:5.31
最大漏源导通电阻:0.15 ΩJESD-30 代码:R-PSSO-G2
端子数量:2封装主体材料:PLASTIC/EPOXY
封装形状:RECTANGULAR封装形式:SMALL OUTLINE
认证状态:Not Qualified表面贴装:YES
端子形式:GULL WING端子位置:SINGLE
Base Number Matches:1

2SK3082(S) 数据手册

 浏览型号2SK3082(S)的Datasheet PDF文件第2页浏览型号2SK3082(S)的Datasheet PDF文件第3页浏览型号2SK3082(S)的Datasheet PDF文件第4页浏览型号2SK3082(S)的Datasheet PDF文件第5页浏览型号2SK3082(S)的Datasheet PDF文件第6页浏览型号2SK3082(S)的Datasheet PDF文件第7页 
2SK3082(L), 2SK3082(S)  
Silicon N Channel MOS FET  
High Speed Power Switching  
REJ03G1065-0300  
(Previous: ADE-208-637A)  
Rev.3.00  
Sep 07, 2005  
Features  
Low on-resistance  
RDS(on) = 0.055 typ.  
High speed switching  
4 V gate drive device can be driven from 5 V source  
Outline  
RENESAS Package code: PRSS0004AE-A  
(Package name: LDPAK(L))  
RENESAS Package code: PRSS0004AE-B  
(Package name: LDPAK(S)-(1))  
4
D
4
1. Gate  
G
2. Drain  
3. Source  
4. Drain  
1
2
3
1
2
3
S
Rev.3.00 Sep 07, 2005 page 1 of 8  

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