Datasheet > 2SK3089_09

2SK3089_09

更新时间： 2022-09-18 12:07:23

品牌	Logo	应用领域
东芝 - TOSHIBA		驱动器转换器稳压器电机 DC-DC转换器
页数	文件大小	规格书
3页	159K
描述
Chopper Regulator DC?DC Converter, and Motor Drive

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2SK3089_09 数据手册

2SK3089

TOSHIBA Field Effect Transistor Silicon N Channel MOS Type (π−MOSVI)

2SK3089

Chopper Regulator DC−DC Converter, and Motor Drive

Applications

Unit: mm

z Low drain−source ON resistance

z High forward transfer admittance

: R

= 25 mΩ (typ.)

DS (ON)

: |Y | = 20 S (typ.)

z Low leakage current

z Enhancement mode

: I

= 100 μA (max) (V

= 30 V)

DSS

: V = 1.5 to 3.0 V (V

= 10 V, I = 1 mA)

Absolute Maximum Ratings (Ta = 25°C)

Characteristics

Drain−source voltage

Symbol

Rating

Unit

DSS

Drain−gate voltage (R

Gate−source voltage

= 20 kΩ)

DGR

±20

GSS

DC (Note 1)

Pulse (Note 1)

Drain current

JEDEC

JEITA

―

Drain power dissipation (Tc = 25°C)

Single pulse avalanche energy

134

(Note 2)

TOSHIBA

2-10S1B

Avalanche current

Weight: 1.5 g (typ.)

Repetitive avalanche energy (Note 3)

Channel temperature

°C

150

Storage temperature range

−55 to 150

stg

Note: Using continuously under heavy loads (e.g. the application of high

temperature/current/voltage and the significant change in temperature, etc.)

may cause this product to decrease in the reliability significantly even if the

operating conditions (i.e. operating temperature/current/voltage, etc.) are

within the absolute maximum ratings. Please design the appropriate reliability

upon reviewing the Toshiba Semiconductor Reliability Handbook (“Handling

Precautions”/“Derating Concept and Methods”) and individual reliability data

(i.e. reliability test report and estimated failure rate, etc).

Thermal Characteristics

Characteristics

Symbol

Max

Unit

Thermal resistance, channel to case

Thermal resistance, channel to ambient

2.5

°C / W

th (ch−c)

JEDEC

JEITA

―

83.3

th (ch−a)

Note 1: Ensure that the channel temperature does not exceed 150°C.

Note 2: = 25 V, T = 25°C (initial), L = 60 μH, R = 25 Ω, I = 40 A

TOSHIBA

2-10S2B

Weight: 1.5 g (typ.)

Note 3: Repetitive rating pulse width limited by maximum channel

temperature.

This transistor is an electrostatic-sensitive device.

Please handle with caution.

2009-09-29

12 3

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