Datasheet > 2SK3090_06

2SK3090_06

更新时间： 2024-09-26 04:26:31

品牌	Logo	应用领域
东芝 - TOSHIBA		转换器稳压器电机驱动 DC-DC转换器
页数	文件大小	规格书
3页	209K
描述
Silicon N Channel MOS Type Chopper Regulator DC−DC Converter, and Motor Drive Applications

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2SK3090_06 数据手册

2SK3090

TOSHIBA Field Effect Transistor Silicon N Channel MOS Type (π−MOSVI)

2SK3090

Chopper Regulator DC−DC Converter, and Motor Drive

Applications

Unit: mm

z Low drain−source ON resistance

z High forward transfer admittance

: R

= 16 mΩ (typ.)

DS (ON)

: |Y | = 26 S (typ.)

z Low leakage current

z Enhancement mode

: I

= 100 μA (max) (V

= 30 V)

DSS

: V = 1.5~3.0 V (V

= 10 V, I = 1 mA)

Absolute Maximum Ratings (Ta = 25°C)

Characteristics

Drain−source voltage

Symbol

Rating

Unit

DSS

Drain−gate voltage (R

Gate−source voltage

= 20 kΩ)

DGR

±20

GSS

DC (Note 1)

Pulse (Note 1)

Drain current

135

Drain power dissipation (Tc = 25°C)

Single pulse avalanche energy

220

(Note 2)

JEDEC

JEITA

―

Avalanche current

Repetitive avalanche energy (Note 3)

Channel temperature

°C

150

TOSHIBA

2-10S1B

Storage temperature range

−55~150

stg

Weight: 1.5 g (typ.)

Note: Using continuously under heavy loads (e.g. the application of high

temperature/current/voltage and the significant change in temperature, etc.)

may cause this product to decrease in the reliability significantly even if the

operating conditions (i.e. operating temperature/current/voltage, etc.) are

within the absolute maximum ratings. Please design the appropriate reliability

upon reviewing the Toshiba Semiconductor Reliability Handbook (“Handling

Precautions”/Derating Concept and Methods) and individual reliability data (i.e.

reliability test report and estimated failure rate, etc).

Thermal Characteristics

Characteristics

Symbol

Max

2.08

Unit

Thermal resistance, channel to case

°C / W

th (ch−c)

Thermal resistance, channel to

ambient

83.3

°C / W

th (ch−a)

Note 1: Ensure that the channel temperature does not exceed 150°C.

Note 2: = 25 V, T = 25°C (initial), L = 78 μH, R = 25 Ω, I = 45 A

JEDEC

JEITA

―

Note 3: Repetitive rating: pulse width limited by maximum channel

temperature

TOSHIBA

2-10S2B

This transistor is an electrostatic-sensitive device.

Please handle with caution.

Weight: 1.5 g (typ.)

2006-11-16

12 3

中文翻译

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与2SK3090_06相关器件

型号	品牌	获取价格	描述	数据表
2SK3090_09	TOSHIBA	获取价格	Chopper Regulator DC?DC Converter and Motor Drive
2SK3092	SANYO	获取价格	Ultrahigh-Speed Switching Applications
2SK3092TP	ETC	获取价格	TRANSISTOR \| MOSFET \| N-CHANNEL \| 400V V(BR)DSS \| 3A I(D) \| TO-251VAR
2SK3092TP-FA	ETC	获取价格	TRANSISTOR \| MOSFET \| N-CHANNEL \| 400V V(BR)DSS \| 3A I(D) \| TO-252VAR
2SK3093	ETC	获取价格	TRANSISTOR \| MOSFET \| N-CHANNEL \| 400V V(BR)DSS \| 3A I(D) \| TO-220CI
2SK3093LS	SANYO	获取价格	N-Channel Silicon MOSFET General-Purpose Switching Device
2SK3094	SANYO	获取价格	General-Purpose Switching Device Applications
2SK3095	ETC	获取价格	TRANSISTOR \| MOSFET \| N-CHANNEL \| 400V V(BR)DSS \| 5A I(D) \| TO-220CI
2SK3095LS	SANYO	获取价格	N-Channel Silicon MOSFET General-Purpose Switching Device
2SK3096	SANYO	获取价格	General-Purpose Switching Device Applications

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