Datasheet > 2SK3090_09

2SK3090_09

更新时间： 2024-09-26 07:32:27

品牌	Logo	应用领域
东芝 - TOSHIBA		驱动器转换器稳压器电机 DC-DC转换器
页数	文件大小	规格书
3页	176K
描述
Chopper Regulator DC?DC Converter and Motor Drive

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中文翻译

获取价格

数据手册

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2SK3090_09 数据手册

2SK3090

TOSHIBA Field Effect Transistor Silicon N Channel MOS Type (π−MOSVI)

2SK3090

Chopper Regulator DC−DC Converter and Motor Drive

Applications

Unit: mm

z Low drain−source ON resistance

z High forward transfer admittance

: R

= 16 mΩ (typ.)

DS (ON)

: |Y | = 26 S (typ.)

z Low leakage current

z Enhancement mode

: I

= 100 μA (max) (V

= 30 V)

DSS

: V = 1.5 to 3.0 V (V

= 10 V, I = 1 mA)

Absolute Maximum Ratings (Ta = 25°C)

Characteristics

Drain−source voltage

Symbol

Rating

Unit

DSS

Drain−gate voltage (R

Gate−source voltage

= 20 kΩ)

DGR

±20

GSS

DC (Note 1)

Pulse (Note 1)

Drain current

135

Drain power dissipation (Tc = 25°C)

Single pulse avalanche energy

JEDEC

JEITA

―

220

(Note 2)

Avalanche current

TOSHIBA

2-10S1B

Repetitive avalanche energy (Note 3)

Channel temperature

°C

Weight: 1.5 g (typ.)

150

Storage temperature range

−55 to 150

stg

Note: Using continuously under heavy loads (e.g. the application of high

temperature/current/voltage and the significant change in

temperature, etc.) may cause this product to decrease in the

reliability significantly even if the operating conditions (i.e. operating

temperature/current/voltage, etc.) are within the absolute maximum

ratings. Please design the appropriate reliability upon reviewing the

Toshiba Semiconductor Reliability Handbook (“Handling

Precautions”/“Derating Concept and Methods”) and individual

reliability data (i.e. reliability test report and estimated failure rate,

etc).

Thermal Characteristics

Characteristics

Symbol

Max

Unit

Thermal resistance, channel to case

Thermal resistance, channel to ambient

2.08

83.3

°C / W

th (ch−c)

JEDEC

JEITA

―

th (ch−a)

Note 1: Ensure that the channel temperature does not exceed 150°C.

Note 2: = 25 V, T = 25°C (initial), L = 78 μH, R = 25 Ω, I = 45 A

TOSHIBA

2-10S2B

Weight: 1.5 g (typ.)

Note 3: Repetitive rating: pulse width limited by maximum channel

temperature

This transistor is an electrostatic-sensitive device.

Please handle with caution.

2009-09-29

12 3

中文翻译

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与2SK3090_09相关器件

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2SK3092TP-FA	ETC	获取价格	TRANSISTOR \| MOSFET \| N-CHANNEL \| 400V V(BR)DSS \| 3A I(D) \| TO-252VAR
2SK3093	ETC	获取价格	TRANSISTOR \| MOSFET \| N-CHANNEL \| 400V V(BR)DSS \| 3A I(D) \| TO-220CI
2SK3093LS	SANYO	获取价格	N-Channel Silicon MOSFET General-Purpose Switching Device
2SK3094	SANYO	获取价格	General-Purpose Switching Device Applications
2SK3095	ETC	获取价格	TRANSISTOR \| MOSFET \| N-CHANNEL \| 400V V(BR)DSS \| 5A I(D) \| TO-220CI
2SK3095LS	SANYO	获取价格	N-Channel Silicon MOSFET General-Purpose Switching Device
2SK3096	SANYO	获取价格	General-Purpose Switching Device Applications
2SK3097	ETC	获取价格	TRANSISTOR \| MOSFET \| N-CHANNEL \| 400V V(BR)DSS \| 6.5A I(D) \| TO-220CI

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