Datasheet > 2SK3089(SM)

2SK3089(SM)

更新时间： 2024-01-28 02:17:34

品牌	Logo	应用领域
东芝 - TOSHIBA		/
页数	文件大小	规格书
3页	203K
描述
2SK3089(SM)

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技术参数
数据手册

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2SK3089(SM) 技术参数

生命周期：	Obsolete	包装说明：	,
Reach Compliance Code：	unknown	风险等级：	5.84
配置：	Single	最大漏极电流 (Abs) (ID)：	40 A
FET 技术：	METAL-OXIDE SEMICONDUCTOR	工作模式：	ENHANCEMENT MODE
最高工作温度：	150 °C	极性/信道类型：	N-CHANNEL
最大功率耗散 (Abs)：	50 W	子类别：	FET General Purpose Power
表面贴装：	YES	Base Number Matches：	1

2SK3089(SM) 数据手册

2SK3089

TOSHIBA Field Effect Transistor Silicon N Channel MOS Type (π−MOSVI)

2SK3089

Chopper Regulator DC−DC Converter, and Motor Drive

Applications

Unit: mm

Low drain−source ON resistance

: R

= 25 mΩ (typ.)

DS (ON)

High forward transfer admittance

: |Y | = 20 S (typ.)

Low leakage current

Enhancement mode

: I

= 100 µA (max) (V

= 30 V)

DSS

: V = 1.5~3.0 V (V

= 10 V, I = 1 mA)

Absolute Maximum Ratings (Ta = 25°C)

Characteristics

Drain−source voltage

Symbol

Rating

Unit

DSS

Drain−gate voltage (R

= 20 kΩ)

DGR

Gate−source voltage

±20

GSS

DC (Note 1)

Pulse (Note 1)

Drain current

Drain power dissipation (Tc = 25°C)

JEDEC

JEITA

―

Single pulse avalanche energy

134

(Note 2)

TOSHIBA

2-10S1B

Avalanche current

Weight: 1.5 g (typ.)

Repetitive avalanche energy (Note 3)

Channel temperature

°C

150

Storage temperature range

stg

−55~150

Note: Using continuously under heavy loads (e.g. the application of high

temperature/current/voltage and the significant change in temperature, etc.)

may cause this product to decrease in the reliability significantly even if the

operating conditions (i.e. operating temperature/current/voltage, etc.) are

within the absolute maximum ratings. Please design the appropriate reliability

upon reviewing the Toshiba Semiconductor Reliability Handbook (“Handling

Precautions”/Derating Concept and Methods) and individual reliability data (i.e.

reliability test report and estimated failure rate, etc).

Thermal Characteristics

Characteristics

Symbol

Max

2.5

Unit

Thermal resistance, channel to case

°C / W

th (ch−c)

JEDEC

JEITA

―

Thermal resistance, channel to

ambient

83.3

°C / W

th (ch−a)

Note 1: Ensure that the channel temperature does not exceed 150°C.

Note 2: = 25 V, T = 25°C (initial), L = 60 µH, R = 25 Ω, I = 40 A

TOSHIBA

2-10S2B

Weight: 1.5 g (typ.)

Note 3: Repetitive rating pulse width limited by maximum channel

temperature.

This transistor is an electrostatic-sensitive device.

Please handle with caution.

2006-11-16

12 3

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