生命周期: | Active | 包装说明: | , |
Reach Compliance Code: | compliant | 风险等级: | 5.76 |
配置: | Single | 最大漏极电流 (Abs) (ID): | 10 A |
FET 技术: | METAL-OXIDE SEMICONDUCTOR | 工作模式: | ENHANCEMENT MODE |
最高工作温度: | 150 °C | 极性/信道类型: | N-CHANNEL |
最大功率耗散 (Abs): | 30 W | 子类别: | FET General Purpose Power |
表面贴装: | YES | Base Number Matches: | 1 |
型号 | 品牌 | 获取价格 | 描述 | 数据表 |
2SK3082L | HITACHI |
获取价格 |
Silicon N Channel MOS FET High Speed Power Switching | |
2SK3082L-E | RENESAS |
获取价格 |
Silicon N Channel MOS FET High Speed Power Switching | |
2SK3082S | HITACHI |
获取价格 |
Silicon N Channel MOS FET High Speed Power Switching | |
2SK3082STL-E | RENESAS |
获取价格 |
Silicon N Channel MOS FET High Speed Power Switching | |
2SK3084 | TOSHIBA |
获取价格 |
N CHANNEL MOS TYPE (HIGH SPEED, HIGH CURRENT SWITCHING, CHOPPER REGULATOR, DC-DC CONVERTER | |
2SK3084(SM) | ETC |
获取价格 |
TRANSISTOR | MOSFET | N-CHANNEL | 100V V(BR)DSS | 30A I(D) | TO-263AB | |
2SK3085 | TOSHIBA |
获取价格 |
Chopper Regulator, DC-DC Converter and Motor Drive Applications | |
2SK3085(F) | TOSHIBA |
获取价格 |
2SK3085(F) | |
2SK3085(Q) | TOSHIBA |
获取价格 |
TRANSISTOR,MOSFET,N-CHANNEL,600V V(BR)DSS,3.5A I(D),TO-220AB | |
2SK3085_06 | TOSHIBA |
获取价格 |
Silicon N Channel MOS Type |