2SK3082(L)

更新时间： 2024-11-09 13:04:27

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2SK3082(L) 数据手册

2SK3082(L),2SK3082(S)

Silicon N Channel MOS FET

High Speed Power Switching

ADE-208-637 (Z)

2nd. Edition

May 1998

Features

• Low on-resistance

R_DS(on)= 0.055 Ω typ.

• High speed switching

• 4V gate drive device can be driven from 5V source

Outline

LDPAK

1. Gate

2. Drain

3. Source

4. Drain

12 3 4 5 6 7...9

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型号	品牌	获取价格	描述	数据表
2SK3082(L)\|2SK3082(S)	ETC	获取价格
2SK3082(S)	HITACHI	获取价格	Power Field-Effect Transistor, 0.15ohm, LDPAK-3
2SK3082(S)	RENESAS	获取价格	0.15ohm, POWER, FET, LDPAK-3
2SK3082(S)-(1)	RENESAS	获取价格	TRANSISTOR,MOSFET,N-CHANNEL,60V V(BR)DSS,10A I(D),TO-263ABVAR
2SK3082(S)-(2)	RENESAS	获取价格	Power Field-Effect Transistor, N-Channel, Metal-oxide Semiconductor FET
2SK3082L	HITACHI	获取价格	Silicon N Channel MOS FET High Speed Power Switching
2SK3082L-E	RENESAS	获取价格	Silicon N Channel MOS FET High Speed Power Switching
2SK3082S	HITACHI	获取价格	Silicon N Channel MOS FET High Speed Power Switching
2SK3082STL-E	RENESAS	获取价格	Silicon N Channel MOS FET High Speed Power Switching
2SK3084	TOSHIBA	获取价格	N CHANNEL MOS TYPE (HIGH SPEED, HIGH CURRENT SWITCHING, CHOPPER REGULATOR, DC-DC CONVERTER