Datasheet > 2SK3075_07

2SK3075_07

更新时间： 2024-09-14 04:26:31

品牌	Logo	应用领域
东芝 - TOSHIBA		放大器功率放大器
页数	文件大小	规格书
4页	168K
描述
SILICON N CHANNEL MOS TYPE RF POWER MOSFET FOR VHF−AND UHF−BAND POWER AMPLIFIER

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数据手册

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2SK3075_07 数据手册

2SK3075

TOSHIBA FIELD EFFECT TRANSISTOR SILICON N CHANNEL MOS TYPE

2SK3075

RF POWER MOSFET FOR VHF−AND UHF−BAND POWER AMPLIFIER

Unit: mm

(Note)The TOSHIBA products listed in this document are intended for high

frequency Power Amplifier of telecommunications equipment. These

TOSHIBA products are neither intended nor warranted for any other use.

Do not use these TOSHIBA products listed in this document except for high

frequency Power Amplifier of telecommunications equipment.

z Output Power

z Power Gain

: P ≥ 7.5W

: G ≥ 11.7dB

z Drain Efficiency

: η ≥ 50%

ABSOLUTE MAXIMUM RATINGS (Ta = 25°C)

CHARACTERISTIC

Drain-Source Voltage

SYMBOL

RATING

UNIT

DSS

Gate-Source Voltage

Drain Current

GSS

Drain Power Dissipation

Channel Temperature

Storage Temperature Range

°C

stg

JEDEC

JEITA

—

150

−45~150

TOSHIBA

2−5N1A

Weight: 0.08 g (typ.)

Note: Using continuously under heavy loads (e.g. the application of high

temperature/current/voltage and the significant change in temperature, etc.) may cause this product to

decrease in the reliability significantly even if the operating conditions (i.e. operating

temperature/current/voltage, etc.) are within the absolute maximum ratings.

Please design the appropriate reliability upon reviewing the Toshiba Semiconductor Reliability Handbook

(“Handling Precautions”/“Derating Concept and Methods”) and individual reliability data (i.e. reliability test

report and estimated failure rate, etc).

*: Tc = 25°C When mounted on a 1.6mm glass epoxy PCB

MARKING

2007-11-01

12 3 4

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