Datasheet > 2SK3074_07

2SK3074_07

更新时间： 2024-09-14 04:26:31

品牌	Logo	应用领域
东芝 - TOSHIBA		放大器功率放大器
页数	文件大小	规格书
4页	160K
描述
SILICON N CHANNEL MOS TYPE RF POWER MOSFET FOR VHF−AND UHF-BAND POWER AMPLIFIER

阅读下载

中文翻译

获取价格

数据手册

如果您发现信息不准确，欢迎纠错

2SK3074_07 数据手册

2SK3074

TOSHIBA FIELD EFFECT TRANSISTOR SILICON N CHANNEL MOS TYPE

2SK3074

RF POWER MOSFET

FOR VHF−AND UHF-BAND POWER AMPLIFIER

Unit in mm

(Note)The TOSHIBA products listed in this document are intended for high

frequency Power Amplifier of telecommunications equipment.These TOSHIBA

products are neither intended nor warranted for any other use.Do not use

these TOSHIBA products listed in this document except for high frequency

Power Amplifier of telecommunications equipment.

z Output Power

z Power Gain

: P ≥ 630mW

: G ≥ 14.9dB

z Drain Efficiency

: η ≥ 45%

ABSOLUTE MAXIMUM RATINGS (Ta = 25°C)

CHARACTERISTIC

Drain-Source Voltage

SYMBOL

RATING

UNIT

DSS

Gate-Source Voltage

Drain Current

GSS

Drain Power Dissipation

Channel Temperature

Storage Temperature Range

(Note 1)

°C

JEDEC

—

150

JEITA

SC−62

2−5K1D

TOSHIBA

stg

−45~150

Weight: 0.05 g (typ.)

Note: Using continuously under heavy loads (e.g. the application of high

temperature/current/voltage and the significant change in temperature, etc.) may cause this product to

decrease in the reliability significantly even if the operating conditions (i.e. operating

temperature/current/voltage, etc.) are within the absolute maximum ratings.

Please design the appropriate reliability upon reviewing the Toshiba Semiconductor Reliability Handbook

(“Handling Precautions”/“Derating Concept and Methods”) and individual reliability data (i.e. reliability test

report and estimated failure rate, etc).

Note 1: Tc = 25°C When mounted on a 1.6mm glass epoxy PCB

MARKING

Part No. (or abbreviation code)

A line indicates

lead (Pb)-free package or

lead (Pb)-free finish.

Lot No.

1. Gate

2. Source

3. Drain

Caution: This device is sensitive to electrostatic discharge.

Please make enough tool and equipment earthed when you handle.

2007-11-01

12 3 4

中文翻译

下载PDF

与2SK3074_07相关器件

型号	品牌	获取价格	描述	数据表
2SK3075	TOSHIBA	获取价格	N CHANNEL MOS TYPE (RF POWER MOSFET FOR VHF- AND UHF-BAND POWER AMPLIFIER)
2SK3075(TE12L)	TOSHIBA	获取价格	TRANSISTOR,MOSFET,N-CHANNEL,30V V(BR)DSS,5A I(D),RFMOD
2SK3075_07	TOSHIBA	获取价格	SILICON N CHANNEL MOS TYPE RF POWER MOSFET FOR VHF−AND UHF−BAND POWER AMPLIFIE
2SK3076	HITACHI	获取价格	Silicon N Channel MOS FET High Speed Power Switching
2SK3076(L)	HITACHI	获取价格	Power Field-Effect Transistor, 0.9ohm, LDPAK-3
2SK3076(S)	HITACHI	获取价格	Power Field-Effect Transistor, 0.9ohm, LDPAK-3
2SK3076L	HITACHI	获取价格	Silicon N Channel MOS FET High Speed Power Switching
2SK3076S	HITACHI	获取价格	Silicon N Channel MOS FET High Speed Power Switching
2SK3077	TOSHIBA	获取价格	900 MHz BAND AMPLIFIER APPLICATIONS
2SK3077_07	TOSHIBA	获取价格	SILICON N CHANNEL MOS TYPE 900 MHz BAND AMPLIFIER APPLICATIONS (GSM)