是否Rohs认证: | 符合 | 生命周期: | Active |
零件包装代码: | SC-62 | 包装说明: | SC-62, 2-5K1D, 3 PIN |
针数: | 3 | Reach Compliance Code: | unknown |
ECCN代码: | EAR99 | 风险等级: | 5.15 |
Is Samacsys: | N | 配置: | SINGLE |
最小漏源击穿电压: | 30 V | 最大漏极电流 (Abs) (ID): | 1 A |
最大漏极电流 (ID): | 1 A | FET 技术: | METAL-OXIDE SEMICONDUCTOR |
最高频带: | ULTRA HIGH FREQUENCY BAND | JESD-30 代码: | R-PSSO-F3 |
元件数量: | 1 | 端子数量: | 3 |
工作模式: | ENHANCEMENT MODE | 最高工作温度: | 150 °C |
封装主体材料: | PLASTIC/EPOXY | 封装形状: | RECTANGULAR |
封装形式: | SMALL OUTLINE | 峰值回流温度(摄氏度): | NOT SPECIFIED |
极性/信道类型: | N-CHANNEL | 认证状态: | Not Qualified |
子类别: | FET General Purpose Power | 表面贴装: | YES |
端子形式: | FLAT | 端子位置: | SINGLE |
处于峰值回流温度下的最长时间: | NOT SPECIFIED | 晶体管应用: | AMPLIFIER |
晶体管元件材料: | SILICON | Base Number Matches: | 1 |
型号 | 品牌 | 获取价格 | 描述 | 数据表 |
2SK3074_07 | TOSHIBA |
获取价格 |
SILICON N CHANNEL MOS TYPE RF POWER MOSFET FOR VHF−AND UHF-BAND POWER AMPLIFIER | |
2SK3075 | TOSHIBA |
获取价格 |
N CHANNEL MOS TYPE (RF POWER MOSFET FOR VHF- AND UHF-BAND POWER AMPLIFIER) | |
2SK3075(TE12L) | TOSHIBA |
获取价格 |
TRANSISTOR,MOSFET,N-CHANNEL,30V V(BR)DSS,5A I(D),RFMOD | |
2SK3075_07 | TOSHIBA |
获取价格 |
SILICON N CHANNEL MOS TYPE RF POWER MOSFET FOR VHF−AND UHF−BAND POWER AMPLIFIE | |
2SK3076 | HITACHI |
获取价格 |
Silicon N Channel MOS FET High Speed Power Switching | |
2SK3076(L) | HITACHI |
获取价格 |
Power Field-Effect Transistor, 0.9ohm, LDPAK-3 | |
2SK3076(S) | HITACHI |
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Power Field-Effect Transistor, 0.9ohm, LDPAK-3 | |
2SK3076L | HITACHI |
获取价格 |
Silicon N Channel MOS FET High Speed Power Switching | |
2SK3076S | HITACHI |
获取价格 |
Silicon N Channel MOS FET High Speed Power Switching | |
2SK3077 | TOSHIBA |
获取价格 |
900 MHz BAND AMPLIFIER APPLICATIONS |