生命周期: | Lifetime Buy | 零件包装代码: | D2PAK |
包装说明: | SMALL OUTLINE, R-PSSO-G2 | 针数: | 3 |
Reach Compliance Code: | unknown | ECCN代码: | EAR99 |
HTS代码: | 8541.29.00.95 | 风险等级: | 5.28 |
Is Samacsys: | N | 雪崩能效等级(Eas): | 160 mJ |
外壳连接: | DRAIN | 配置: | SINGLE WITH BUILT-IN DIODE |
最小漏源击穿电压: | 60 V | 最大漏极电流 (ID): | 83 A |
最大漏源导通电阻: | 0.023 Ω | FET 技术: | METAL-OXIDE SEMICONDUCTOR |
JEDEC-95代码: | TO-263AB | JESD-30 代码: | R-PSSO-G2 |
元件数量: | 1 | 端子数量: | 2 |
工作模式: | ENHANCEMENT MODE | 封装主体材料: | PLASTIC/EPOXY |
封装形状: | RECTANGULAR | 封装形式: | SMALL OUTLINE |
峰值回流温度(摄氏度): | NOT SPECIFIED | 极性/信道类型: | P-CHANNEL |
最大脉冲漏极电流 (IDM): | 300 A | 认证状态: | Not Qualified |
表面贴装: | YES | 端子形式: | GULL WING |
端子位置: | SINGLE | 处于峰值回流温度下的最长时间: | NOT SPECIFIED |
晶体管应用: | SWITCHING | 晶体管元件材料: | SILICON |
Base Number Matches: | 1 |
型号 | 品牌 | 获取价格 | 描述 | 数据表 |
2SJ606-ZJ-E1-AZ | RENESAS |
获取价格 |
2SJ606-ZJ-E1-AZ | |
2SJ606-ZJ-E2-AZ | RENESAS |
获取价格 |
2SJ606-ZJ-E2-AZ | |
2SJ607 | NEC |
获取价格 |
MOS FIELD EFFECT TRANSISTOR | |
2SJ607 | KEXIN |
获取价格 |
MOS Field Effect Transistor | |
2SJ607-AZ | NEC |
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Power Field-Effect Transistor, 83A I(D), 60V, 0.016ohm, 1-Element, P-Channel, Silicon, Met | |
2SJ607-S | NEC |
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MOS FIELD EFFECT TRANSISTOR | |
2SJ607-S-AZ | NEC |
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Power Field-Effect Transistor, 83A I(D), 60V, 0.016ohm, 1-Element, P-Channel, Silicon, Met | |
2SJ607-Z | NEC |
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MOS FIELD EFFECT TRANSISTOR | |
2SJ607-Z-AZ | NEC |
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暂无描述 | |
2SJ607-Z-E1-AZ | RENESAS |
获取价格 |
Pch Single Power Mosfet -60V -83A 0.011Mohm Mp-25Z/To-220Smd, MP-25Z, /Embossed Tape |