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2SJ607 PDF预览

2SJ607

更新时间: 2024-10-30 06:23:59
品牌 Logo 应用领域
科信 - KEXIN 晶体晶体管开关脉冲局域网
页数 文件大小 规格书
2页 50K
描述
MOS Field Effect Transistor

2SJ607 数据手册

 浏览型号2SJ607的Datasheet PDF文件第2页 
SMD Type  
MOSFET  
MOS Field Effect Transistor  
2SJ607  
TO-263  
Unit: mm  
+0.2  
4.57  
-0.2  
Features  
+0.1  
1.27  
-0.1  
Low on-resistance  
RDS(on)1 =11 m MAX. (VGS =-10 V, ID = -42A)  
RDS(on)2 = 16 m MAX. (VGS = -4.0 V, ID =-42 A)  
Low Ciss: Ciss = 7500 pF TYP.  
+0.1  
-0.1  
0.1max  
1.27  
Built-in gate protection diode  
+0.1  
0.81  
-0.1  
2.54  
1 Gate  
+0.2  
2.54  
-0.2  
+0.1  
5.08  
-0.1  
+0.2  
0.4  
-0.2  
2 Drain  
3 Source  
Absolute Maximum Ratings Ta = 25  
Parameter  
Drain to source voltage  
Gate to source voltage  
Drain current (DC)  
Symbol  
VDSS  
VGSS  
ID  
Rating  
-60  
Unit  
V
V
20  
A
83  
Drain current(pulse) *  
ID  
A
332  
PD  
160  
W
W
Power dissipation  
TC=25  
TA=25  
PD  
1.5  
Channel temperature  
Storage temperature  
Tch  
150  
Tstg  
-55 to +150  
* PW 10 s, duty cycle  
1 %  
1
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