Datasheet > 2SJ610_09

2SJ610_09

更新时间： 2024-11-18 05:57:27

品牌	Logo	应用领域
东芝 - TOSHIBA		晶体晶体管场效应晶体管
页数	文件大小	规格书
6页	184K
描述
TOSHIBA Field Effect Transistor Silicon P-Channel MOS Type

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2SJ610_09 数据手册

2SJ610

TOSHIBA Field Effect Transistor Silicon P-Channel MOS Type (π-MOSV)

2SJ610

Switching Regulator, DC/DC Converter and

Motor Drive Applications

Unit: mm

6.8 MAX.

5.2 ± 0.2

0.6 MAX.

•

Low drain-source ON-resistance: R

= 1.85 Ω (typ.)

DS (ON)

High forward transfer admittance: |Y | = 18 S (typ.)

Low leakage current: I

= −100 μA (V

= −250 V)

DSS

Enhancement mode: V = −1.5 to −3.5 V (V

= 10 V, I = 1 mA)

0.95 MAX.

0.6 ± 0.15

Absolute Maximum Ratings (Ta = 25°C)

2.3 2.3

0.6 MAX.

Characteristic

Drain-source voltage

Symbol

Rating

Unit

−250

±20

DSS

Drain-gate voltage (R

Gate-source voltage

= 20 kΩ)

DGR

GSS

1. GATE

(Note 1)

−2.0

2. DRAIN

（HEAT SINK）

3. SOURSE

Drain current

Pulse (t = 1 ms)

−4.0

(Note 1)

JEDEC

―

Drain power dissipation

JEITA

SC-64

Single-pulse avalanche energy

180

(Note 2)

TOSHIBA

2-7B1B

Avalanche current

−2.0

2.0

Weight: 0.36 g (typ.)

Repetitive avalanche energy (Note 3)

Channel temperature

°C

6.5 ± 0.2

5.2 ± 0.2

150

0.6 MAX.

Storage temperature range

stg

−55 to 150

Note: Using continuously under heavy loads (e.g. the application of high

temperature/current/voltage and the significant change in temperature,

etc.) may cause this product to decrease in the reliability significantly even

if the operating conditions (i.e. operating temperature/current/voltage,

etc.) are within the absolute maximum ratings. Please design the

appropriate reliability upon reviewing the Toshiba Semiconductor

Reliability Handbook (“Handling Precautions”/“Derating Concept and

Methods”) and individual reliability data (i.e. reliability test report and

estimated failure rate, etc).

1.1 ± 0.2

0.8 MAX.

0.6 MAX.

1.05 MAX.

0.6 ± 0.15

Thermal Characteristics

2.3 ± 0.15

1. GATE

2. DRAIN

（HEAT SINK）

3. SOURSE

2.3 ± 0.15

Characteristic

Symbol

Max

Unit

Thermal resistance, channel to case

Thermal resistance, channel to ambient

6.25

125

°C/W

th (ch-c)

th (ch-a)

Note 1: Ensure that the channel temperature does not exceed 150°C.

JEDEC

―

JEITA

Note 2: V

= −50 V, T = 25°C (initial), L = 75 mH, I

= 25 Ω

= −2.0 A,

TOSHIBA

2-7J1B

Note 3: Repetitive rating: pulse width limited by maximum channel

temperature

Weight: 0.36 g (typ.)

This transistor is an electrostatic-sensitive device. Handle with care.

2009-07-13

12 3 4 5 6

中文翻译

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