Datasheet > 2SJ624

2SJ624

更新时间： 2024-11-20 22:33:15

品牌	Logo	应用领域
日电电子 - NEC		/
页数	文件大小	规格书
8页	73K
描述
MOS FIELD EFFECT TRANSISTOR

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中文翻译

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技术参数
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2SJ624 技术参数

是否Rohs认证：	不符合	生命周期：	Transferred
零件包装代码：	SC-96	包装说明：	SMALL OUTLINE, R-PDSO-G3
针数：	3	Reach Compliance Code：	compliant
ECCN代码：	EAR99	HTS代码：	8541.21.00.95
风险等级：	5.16	配置：	SINGLE WITH BUILT-IN DIODE
最小漏源击穿电压：	20 V	最大漏极电流 (ID)：	4.5 A
最大漏源导通电阻：	0.071 Ω	FET 技术：	METAL-OXIDE SEMICONDUCTOR
JESD-30 代码：	R-PDSO-G3	JESD-609代码：	e0
元件数量：	1	端子数量：	3
工作模式：	ENHANCEMENT MODE	封装主体材料：	PLASTIC/EPOXY
封装形状：	RECTANGULAR	封装形式：	SMALL OUTLINE
峰值回流温度（摄氏度）：	NOT SPECIFIED	极性/信道类型：	P-CHANNEL
认证状态：	Not Qualified	表面贴装：	YES
端子面层：	TIN LEAD	端子形式：	GULL WING
端子位置：	DUAL	处于峰值回流温度下的最长时间：	NOT SPECIFIED
晶体管应用：	SWITCHING	晶体管元件材料：	SILICON
Base Number Matches：	1

2SJ624 数据手册

DATA SHEET

MOS FIELD EFFECT TRANSISTOR

2SJ624

P-CHANNEL MOS FIELD EFFECT TRANSISTOR

FOR SWITCHING

DESCRIPTION

PACKAGE DRAWING (Unit: mm)

The 2SJ624 is a switching device which can be driven directly

by a 1.8 V power source.

+0.1

–0.05

0.4

+0.1

–0.06

0.16

This device features a low on-state resistance and excellent

switching characteristics, and is suitable for applications such

as power switch of portable machine and so on.

0 to 0.1

FEATURES

• 1.8 V drive available

• Low on-state resistance

0.65

0.95 0.95

1.9

R^DS(on)1= 54 mΩ MAX. (V^GS= –4.5 V, I^D= –2.5 A)

R^DS(on)2= 71 mΩ MAX. (V^GS= –2.5 V, I^D= –2.5 A)

R^DS(on)3= 108 mΩ MAX. (V^GS= –1.8 V, I^D= –1.5 A)

0.9 to 1.1

2.9 ±0.2

: Gate

ORDERING INFORMATION

2 : Source

3 : Drain

PART NUMBER

PACKAGE

2SJ624

SC-96 (Mini Mold Thin Type)

Marking: XH

ABSOLUTE MAXIMUM RATINGS (T^A= 25°C)

EQUIVALENT CIRCUIT

Drain to Source Voltage (V^GS= 0 V)

Gate to Source Voltage (V^DS= 0 V)

Drain Current (DC) (T^A= 25°C)

Drain Current (pulse) ^Note1

Total Power Dissipation

V^DSS

V^GSS

I^D(DC)

I^D(pulse)

P^T1

–20

m8.0

Drain

m4.5

Body

Diode

m18

Gate

0.2

°C

Total Power Dissipation ^Note2

Gate

Protection

Diode

P^T2

1.25

Channel Temperature

Tch

150

Source

Storage Temperature

Tstg

–55 to +150

Notes 1. PW ≤ 10 µs, Duty Cycle ≤ 1%

2. Mounted on FR-4 board, t ≤ 5 sec.

Remark The diode connected between the gate and source of the transistor serves as a protector against ESD. When

this device actually used, an additional protection circuit is externally required if a voltage exceeding the rated

voltage may be applied to this device.

The information in this document is subject to change without notice. Before using this document, please

confirm that this is the latest version.

Not all devices/types available in every country. Please check with local NEC representative for

availability and additional information.

Document No.

Date Published June 2002 NS CP(K)

Printed in Japan

D15890EJ1V0DS00 (1st edition)

2002

12 3 4 5 6 7 8

中文翻译

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与2SJ624相关器件

型号	品牌	获取价格	描述	数据表
2SJ624-A	RENESAS	获取价格	4500mA, 20V, P-CHANNEL, Si, SMALL SIGNAL, MOSFET, SC-96, 3 PIN
2SJ624-L	RENESAS	获取价格	2SJ624-L
2SJ624-L-AT	RENESAS	获取价格	TRANSISTOR,MOSFET,P-CHANNEL,20V V(BR)DSS,4.5A I(D),SOT-346
2SJ624-T1B	RENESAS	获取价格	2SJ624-T1B
2SJ624-T1B-A	RENESAS	获取价格	P-CHANNEL MOS FIELD EFFECT TRANSISTOR FOR SWITCHING
2SJ624-T1B-AT	RENESAS	获取价格	暂无描述
2SJ624-T2B-AT	RENESAS	获取价格	TRANSISTOR,MOSFET,P-CHANNEL,20V V(BR)DSS,4.5A I(D),SOT-346
2SJ625	NEC	获取价格	MOS FIELD EFFECT TRANSISTOR
2SJ625-L-A	RENESAS	获取价格	TRANSISTOR,MOSFET,P-CHANNEL,20V V(BR)DSS,3A I(D),SOT-346
2SJ625-L-AT	RENESAS	获取价格	TRANSISTOR,MOSFET,P-CHANNEL,20V V(BR)DSS,3A I(D),SOT-346

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